公开(公告)号：EP0152116B1

公开(公告)日：1991-01-23

申请号：EP85101688.1

申请日：1985-02-15

申请人： HITACHI, LTD.

发明人： Nakazato, Kazuo ,  Nakamura, Tohru ,  Kato, Masataka ,  Okabe, Takahiro

IPC分类号： H01L29/73 ,  H01L29/10 ,  H01L21/225 ,  H01L21/316

CPC分类号： H01L21/28525 ,  H01L21/2257 ,  H01L29/1008 ,  H01L29/735

公开(公告)号：EP0152116A2

公开(公告)日：1985-08-21

申请号：EP85101688.1

申请日：1985-02-15

申请人： HITACHI, LTD.

发明人： Nakazato, Kazuo ,  Nakamura, Tohru ,  Kato, Masataka ,  Okabe, Takahiro

IPC分类号： H01L29/73 ,  H01L29/10 ,  H01L21/225 ,  H01L21/316

CPC分类号： H01L21/28525 ,  H01L21/2257 ,  H01L29/1008 ,  H01L29/735

摘要： 57 A lateral bipolar transistor affording a good controllability for a base length is disclosed.
In fabricating a lateral bipolar transistor by forming a single crystal column (15) and disposing heavily doped polycrystalline regions (21E,21C) on both sides of the column (15). contact surfaces between the single crystal column (15) and the heavily doped polycrystalline regions (21E,21C) are controlled by etching of an oxide film (61). The etching of the oxide film (61) can provide a device of a precision higher than attained by controlling any other element.