Interference film filters, optical waveguides and methods for producing them
    1.
    发明公开
    Interference film filters, optical waveguides and methods for producing them 失效
    Dünnschichtinterferenzfilter,optische Wellenleiter和Verfahren zu ihrer Herstellung。

    公开(公告)号:EP0266214A2

    公开(公告)日:1988-05-04

    申请号:EP87309609.3

    申请日:1987-10-30

    申请人: HITACHI, LTD.

    IPC分类号: G02B1/10 G02B6/12 G02B6/10

    摘要: Interference film filters and optical waveguides with low loss of light, including a laminate deposition-formed on a substrate (1,30) by alternate sputtered lamination of a first film (2,4,10) of amorphous Si x C y O z (x:y:z = 1:0.6-1:0-0.5) having refractive index up to 3.4 and an extinction coefficient below 0.1 and a second thin film (3,5,20) of amorphous Si x O y C z (x:y:z = 1:1.8-2:0-0.5) having a low refractive index in comparison with that of the first thin film. The two film types may be sputtered from a single sintered SiC target by varying oxygen content of a sputter gas mixture.

    摘要翻译: 具有低损失光的干涉膜滤光器和光波导,包括通过交替溅射层压沉积形成在基底(1,30)上的层压沉积的非晶SixCyOz(x:y:z)的第一膜(2,4,10) 折射率高达3.4,消光系数低于0.1,第二薄膜(3,5,20)为无定形六方碳(x:y:z = 1:1.8-2 :0-0.5)与第一薄膜相比具有低折射率。 可以通过改变溅射气体混合物的氧含量从单个烧结的SiC靶溅射两种膜类型。

    Interference film filters, optical waveguides and methods for producing them
    2.
    发明公开
    Interference film filters, optical waveguides and methods for producing them 失效
    干涉膜过滤器,光波导及其生产方法

    公开(公告)号:EP0266214A3

    公开(公告)日:1990-01-31

    申请号:EP87309609.3

    申请日:1987-10-30

    申请人: HITACHI, LTD.

    IPC分类号: G02B1/10 G02B6/12 G02B6/10

    摘要: Interference film filters and optical waveguides with low loss of light, including a laminate deposition-formed on a substrate (1,30) by alternate sputtered lamination of a first film (2,4,10) of amorphous Si x C y O z (x:y:z = 1:0.6-1:0-0.5) having refractive index up to 3.4 and an extinction coefficient below 0.1 and a second thin film (3,5,20) of amorphous Si x O y C z (x:y:z = 1:1.8-2:0-0.5) having a low refractive index in comparison with that of the first thin film. The two film types may be sputtered from a single sintered SiC target by varying oxygen content of a sputter gas mixture.