Defect observing electron microscope
    2.
    发明公开
    Defect observing electron microscope 失效
    Elektronenmikroskop zur Fehlerbeobachtung

    公开(公告)号:EP0686994A1

    公开(公告)日:1995-12-13

    申请号:EP95108927.5

    申请日:1995-06-09

    申请人: HITACHI, LTD.

    IPC分类号: H01J37/26 H01J37/20

    CPC分类号: H01J37/26 H01J2237/2617

    摘要: A transmission electron microscope makes it possible to search for defects without applying an undesirable treatment to a specimen by using a reference specimen prepared separately from a specimen to be observed. A pair of specimen holders (24a, 24b) detachable from the column (21) of the electron microscope are adjacently arranged at upper and lower stages respectively along the electron beam axis to position the specimens closely to each other in an electron beam illuminating position. The pair of holders can be independently set to or removed from the electron beam illuminating position. The specimen holders include devices for selectively finely adjusting the spacing between the specimens, the angle of the specimens with respect to the electron beam axis and with respect to a plane perpendicular to the electron beam axis.

    摘要翻译: 透射电子显微镜使得可以通过使用与要观察的样品分开制备的参考样品,在不对试样施加不期望的处理的情况下搜索缺陷。 从电子显微镜的列(21)可拆卸的一对样本保持器(24a,24b)分别沿着电子束轴相邻地布置在上部和下部阶段,以使电子束照明位置彼此靠近。 该对保持器可以独立地设置或从电子束照明位置移除。 样品架包括用于选择性地微调样品之间的间距的装置,试样相对于电子束轴线的角度以及相对于垂直于电子束轴线的平面的装置。

    Dry etching method
    4.
    发明公开
    Dry etching method 失效
    Trockenätzverfahren。

    公开(公告)号:EP0533497A2

    公开(公告)日:1993-03-24

    申请号:EP92308553.4

    申请日:1992-09-18

    申请人: HITACHI, LTD.

    摘要: Disclosed is a method for dry etching a sample including a plurality of regions different from each other in the photo-absorption of a light having a specified wavelength using an etching gas plasma, comprising the step of: irradiating a light having the wavelength on the sample for reducing an etching rate of a region having a large photo-absorption coefficient to the light, thereby selectively etching a region having a small photo-absorption coefficient to the light. The invention thus permits selective dry etching of for example Al x Ga l-x As relative to GaAs.

    摘要翻译: 公开了一种在使用蚀刻气体等离子体对具有特定波长的光的光吸收中彼此不同的多个区域进行干蚀刻的方法,该方法包括以下步骤:将具有波长的光照射在样品上 为了降低对光具有大的光吸收系数的区域的蚀刻速率,从而选择性地蚀刻对光具有小的光吸收系数的区域。 因此,本发明允许例如Al x Ga 1-xAs相对于GaAs的选择性干蚀刻。