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    Superconducting current detecting circuit employing DC flux parametron circuit
    3.
    发明公开
    Superconducting current detecting circuit employing DC flux parametron circuit 失效
    SupraleitendeStromfühlerschaltung。

    公开(公告)号：EP0205120A2

    公开(公告)日：1986-12-17

    申请号：EP86107693.3

    申请日：1986-06-05

    申请人： HITACHI, LTD. ,  RIKAGAKU KENKYUSHO

    发明人： Harada, Yutaka ,  Goto, Eiichi ,  Kawabe, Ushio ,  Miyamoto, Nobuo ,  Nakane, Hideaki ,  Hatano, Mutsuko

    IPC分类号： G01R19/15 ,  G01R19/00 ,  G01R17/06 ,  G01R33/035

    CPC分类号： G01R19/257 ,  G01R17/06 ,  G01R19/0092 ,  G01R19/15 ,  Y10S505/827 ,  Y10S505/845

    摘要： Disclosed is a superconducting current detecting circuit which comprises a reference current generation circuit (102) for generating a reference current and a DC flux parametron circuit (101a) for comparing an input current to be detected with the reference current to thereby produce pulses in synchronism with an input excitation signal, the number of the pulses being varied in accordance with a difference between the input current and the reference current, the pulses having positive or negative values depending on the polarity of the difference, the reference current generation circuit having means for increasing or decreasing the reference current by a quantity corresponding to the number of the pulses in response to the polarity of the pulses so that reference current generation circuit produces the reference current which is agreed with the input current.

    摘要翻译： 公开了一种超导电流检测电路，其包括用于产生参考电流的参考电流产生电路（102）和用于将待检测的输入电流与参考电流进行比较的DC通量参数电路（101a），从而产生与 输入激励信号，脉冲数根据输入电流和参考电流之间的差异而变化，脉冲具有取决于差异的极性的正值或负值，参考电流产生电路具有增加的装置 或者响应于脉冲的极性将参考电流减小与脉冲数相对应的量，使得参考电流产生电路产生与输入电流一致的参考电流。

    Superconducting device
    6.
    发明公开
    Superconducting device 失效
    超导设备

    公开(公告)号：EP0667645A1

    公开(公告)日：1995-08-16

    申请号：EP95104470.0

    申请日：1985-11-04

    申请人： HITACHI, LTD.

    发明人： Nishino, Toshikazu ,  Miyake, Mutsuko ,  Kawabe, Ushio ,  Harada, Yutaka ,  Aoki, Masaaki ,  Hirano, Mikio

    IPC分类号： H01L39/22

    CPC分类号： H01L39/228 ,  H01L21/82

    摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor there- between, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.
    And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.

    摘要翻译： 一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以控制超导电极之间的半导体中的超导弱耦合状态。 超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，由此以高精度确定电极间距离以改善器件特性的均匀性。 并且，在两个超导电极形成在半导体层上并且这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供变化的杂质分布，增益可增加。

    Oxide-superconducting device
    7.
    发明公开
    Oxide-superconducting device 失效
    氧化物超导体器件

    公开(公告)号：EP0297617A3

    公开(公告)日：1989-11-02

    申请号：EP88110583.7

    申请日：1988-07-01

    申请人： HITACHI, LTD.

    发明人： Tarutani, Yoshinobu ,  Kawabe, Ushio

    IPC分类号： H01L39/22

    CPC分类号： H01L39/225 ,  H01L39/2496

    摘要： An oxide-superconducting device comprises first and second electrodes (7) of oxide-superconductor which are con­nected through a tunnel barrier layer (10). The oxide-super­conductor is formed on a substrate (5) having a recess (6), and it includes grain boundaries along the recess. The tunnel barrier layer (10) is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice inter­stices near the grain boundaries.

    Superconducting device
    9.
    发明公开
    Superconducting device 失效
    Supraleitendes Bauelement。

    公开(公告)号：EP0257474A2

    公开(公告)日：1988-03-02

    申请号：EP87111770.1

    申请日：1987-08-13

    申请人： HITACHI, LTD.

    发明人： Nishino, Toshikazu ,  Kawabe, Ushio ,  Hatano, Mutsuko

    IPC分类号： H01L39/22

    CPC分类号： H01L39/228

    摘要： In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes (6) provided in contact with a semiconductor (1) is controlled by a control electrode (3) provided between the superconducting electrodes, high impurity concentration regions (4) are formed within the semiconductor so as to lie in contact with the superconducting electrodes (6) and to extend to under ends of the control electrode.

    摘要翻译： 在超导装置中，超导电流在与半导体（1）接触的两个超导电极（6）之间流动的值由设置在超导电极之间的控制电极（3）控制，高杂质浓度区域（4） ）形成在半导体内以与超导电极（6）接触并延伸到控制电极的下端。