摘要:
A solid-state imaging device 1 is provided with (1) a photodetecting section 11 in which MxN of pixels are two-dimensionally arranged in M rows and N columns, and a pixel P m,n at the m-th row and the n-th column includes a photodiode PD1 m , n , (2) a row selecting section 20 that selects one or more rows, out of M rows of the photodetecting section 11, instructs each pixel in the selected rows to accumulate an electric charge generated in the photodiode PD1 m,n in response to the incidence of light, and instructs to output data corresponding to the amount of accumulated electric charge of each pixel by each row of the photodetecting section 11, and (3) a first signal processing section 30 that inputs data of each pixel, outputted by each row of the photodetecting section 11 by an instruction from the row selecting section 20, and outputs the data by each pixel.
摘要:
There is provided a solid-state imaging device in which images can be read at high speed. Since an n-th processing circuit (e.g. PU1) can be connected to n-th pixel columns (N1) in respective imaging blocks B1, B2, and B3 via switches Q (1), Q (4), and Q (7), signals from the adjacent pixel columns (N2) are to be processed separately by another processing circuit (PU2) even when a partial readout area R may be small. In addition, an image data arithmetic section 10 specifies the partial readout area R restrictively, which allows for higher speed imaging.
摘要:
An X-ray image acquisition device includes a pixel unit having M pixel arrays each including N pixel portions (N and M are integers of 2 or more), M circuit units, and a control unit. Each circuit unit includes T (T is an integer of N or more) adding sections that sequentially add electrical signals corresponding to output signals from the N pixel portions and a switch section for switching connection states between the N pixel portions and the T adding sections. The control unit switches the connection states in synchronization with the transportation of an object along a first direction so that the electrical signals corresponding to the output signals output from the pixel portions by detecting X-rays transmitted through the same region of the object are added by the same adding sections.
摘要:
A solid-state imaging device 1 is provided with (1) a photodetecting section 11 in which MxN of pixels are two-dimensionally arranged in M rows and N columns, and a pixel P m,n at the m-th row and the n-th column includes a photodiode PD1 m , n , (2) a row selecting section 20 that selects one or more rows, out of M rows of the photodetecting section 11, instructs each pixel in the selected rows to accumulate an electric charge generated in the photodiode PD1 m,n in response to the incidence of light, and instructs to output data corresponding to the amount of accumulated electric charge of each pixel by each row of the photodetecting section 11, and (3) a first signal processing section 30 that inputs data of each pixel, outputted by each row of the photodetecting section 11 by an instruction from the row selecting section 20, and outputs the data by each pixel.
摘要:
A determination unit 70 determines whether there is incident light, based on an output value from an integrating circuit 62, and generates a determinated signal indicating a determinated result. A control unit 80 controls charge accumulating portions of an imaging light-receiving unit 10 whether or not to start accumulation of an electric charge, based on the determinated signal, and changes a charge accumulation capacitance value of the integrating circuit 62 of an output unit 60. Specifically, the control unit 80 varies the capacitance value for accumulation of an electric charge generated in a trigger light-receiving unit 20, depending upon the detection result on the presence/absence of incident light, to switch the sensitivity of the integrating circuit 62 to the trigger PD, thereby enabling optimal utilization of the trigger PD.
摘要:
A solid-state image pickup device 1 includes an imaging photodetecting section 10, a triggering photodetecting section 20, a row selecting section 30, a column selecting section 40, a voltage holding section 50, an output section 60, and a controlling section 70. The imaging photodetecting section 10 is for taking an image of incident light, and includes pixel sections P 1,1 to P M,N arrayed two dimensionally in M rows and N columns. The triggering photodetecting section 20 is for detecting an incidence of light, and includes a triggering photodiode that generates electric charge of an amount according to an incident light intensity. The output section 60 outputs pixel data of a value according to the amount of electric charge generated by a photodiode of any pixel section P m,n of the pixel sections P 1,1 to P M,N included in the imaging photodetecting section 10 and triggering data of a value according to the amount of electric charge generated by the triggering photodiode included in the triggering photodetecting section 20 to a common output signal line Lout.
摘要:
A signal processing circuit 20 has switches 21, a shift register 22, and an integrating circuit 23, and outputs voltages Vout indicating luminance profiles in a second direction and in a first direction of light incident to a photosensitive region 10. The switches 21 are provided corresponding to groups of photosensitive portions on one side electrically connected among a plurality of pixels arrayed in the first direction and corresponding to groups of photosensitive portions on another side electrically connected among a plurality of pixels arrayed in the second direction. The shift register 22 is an element for sequentially reading electric currents from the groups of photosensitive portions on one side in the second direction and for sequentially reading electric currents from the groups of photosensitive portions on another side in the first direction. The integrating circuit 23 sequentially imports the electric currents from the groups of photosensitive portions on one side and the groups of photosensitive portions on another side sequentially read by the shift register 22, and converts the electric currents into voltages.
摘要:
A determination unit 70 determines whether there is incident light, based on an output value from an integrating circuit 62, and generates a determinated signal indicating a determinated result. A control unit 80 controls charge accumulating portions of an imaging light-receiving unit 10 whether or not to start accumulation of an electric charge, based on the determinated signal, and changes a charge accumulation capacitance value of the integrating circuit 62 of an output unit 60. Specifically, the control unit 80 varies the capacitance value for accumulation of an electric charge generated in a trigger light-receiving unit 20, depending upon the detection result on the presence/absence of incident light, to switch the sensitivity of the integrating circuit 62 to the trigger PD, thereby enabling optimal utilization of the trigger PD.
摘要:
The solid-state image pickup device 1 includes an imaging region 10, a triggering photosensitive region 20, a row selecting section 30, a column selecting section 40, a voltage holding section 50, an output section 60, and a controlling section 70. The solid-state image pickup device 1 reads out triggering data by the triggering photosensitive region 20, the integrating circuit 62, and the triggering A/D converting circuit 64 before light incidence, and senses the light incidence on the basis of the triggering data. After the solid-state image pickup device senses the light incidence, the solid-state image pickup device reads out pixel data by the imaging region 10, the voltage holding section 50, a differential operating circuit 61, and an imaging A/D converting circuit 63.
摘要:
There is provided a solid-state imaging device in which images can be read at high speed. Since an n-th processing circuit (e.g. PU1) can be connected to n-th pixel columns (N1) in respective imaging blocks B1, B2, and B3 via switches Q (1), Q (4), and Q (7), signals from the adjacent pixel columns (N2) are to be processed separately by another processing circuit (PU2) even when a partial readout area R may be small. In addition, an image data arithmetic section 10 specifies the partial readout area R restrictively, which allows for higher speed imaging.