公开(公告)号：EP2931658A1

公开(公告)日：2015-10-21

申请号：EP13811317.0

申请日：2013-12-04

申请人： Hemlock Semiconductor Corporation

发明人： KRESZOWSKI, Douglas, Homer ,  LANNING, Elizabeth

IPC分类号： C01B33/02 ,  C30B13/00 ,  C30B29/06 ,  G01N21/64

CPC分类号： C30B13/10 ,  C01B33/02 ,  C30B29/06 ,  G01N21/274 ,  G01N21/278 ,  G01N21/6489 ,  G01N2201/127

摘要： Methods of forming and analyzing doped monocrystalline silicon each comprise the steps of providing: a vessel, particulate silicon, a dopant, and a float-zone apparatus. The vessel for each method comprises silicon and defines a cavity. The methods each further comprise the steps of combining the particulate silicon and the dopant to form treated particulate silicon, and disposing the treated particulate silicon into the cavity of the vessel. The methods yet further comprise the step of float-zone processing the vessel and the treated particulate silicon into doped monocrystalline silicon with the float-zone apparatus. The analytical method further comprises the step of providing an instrument. The analytical method yet further comprises the steps of removing a piece from the doped monocrystalline silicon, and determining the concentration of the dopant in the piece with the instrument. The methods are useful for forming and analyzing monocrystalline silicon having various types and/or concentrations of dopant(s).

摘要翻译： 形成和分析掺杂单晶硅的方法各自包括提供：容器，颗粒状硅，掺杂剂和浮法区域装置的步骤。 用于每种方法的容器包括硅并限定空腔。 所述方法还包括将颗粒状硅和掺杂剂组合以形成经处理的颗粒状硅，并将经处理的颗粒硅设置在容器的空腔中的步骤。 该方法还包括使用浮区设备将容器和经处理的颗粒硅浮选处理成掺杂的单晶硅的步骤。 分析方法还包括提供仪器的步骤。 该分析方法还包括从掺杂的单晶硅去除一块的步骤，以及用仪器确定该片中的掺杂剂的浓度。 该方法可用于形成和分析具有各种类型和/或浓度的掺杂剂的单晶硅。