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    An electrode for a semiconductor device and method of making such an electrode
    2.
    发明公开
    An electrode for a semiconductor device and method of making such an electrode 失效
    用于半导体器件以及制造这种电极的方法的电极。

    公开(公告)号：EP0012019A1

    公开(公告)日：1980-06-11

    申请号：EP79302729.3

    申请日：1979-11-29

    申请人： Hitachi, Ltd.

    发明人： Tsuruoka, Masao ,  Morita, Keiichi ,  Kuniya, Keiichi

    IPC分类号： H01L23/48 ,  H01L21/48 ,  H01L23/04 ,  H01L25/04

    CPC分类号： H01L21/4871 ,  H01L23/051 ,  H01L23/4928 ,  H01L25/072 ,  H01L2224/83101 ,  H01L2924/1301 ,  H01L2924/00

    摘要： A supporting electrode (16,18) is mounted on at lear,t one surface of a semiconductor substrate (11). The sides of the substrate (11) and the electrode are covered by epoxy resin (43). In order to avoid problems arising from the different thermal expansion coefficients of the various materials, the electrode is formed of a copper-carbon fiber composition metal in which carbon fibers are embedded in a spiral and lie parallel to the major surface of the substrate, so that the electrode exhibits anisotropic thermal expansion properties. Its coefficient of expansion parallel to the major surface of the substrate is lower than its coefficient in the direction perpendicular to this surface, since the expansion coefficient of the substrate (e.g. silicon) is lower than that of the resin (43),

    摘要翻译： 辅助电极（16,18）被安装在半导体衬底（11）的至少一个表面上。 基板（11）和所述电极的侧面由环氧树脂（43）覆盖。 为了避免从各种材料的热膨胀系数不同而引起的问题，该电极被形成，其中碳纤维的铜 - 碳纤维组合物的金属的嵌入在平行于基板的主表面上的螺旋形，并且位于，所以 DASS模电极表现出各向异性的热膨胀性质。 其与基板的主表面平行膨胀系数比其在方向系数较低的垂直于该表面，由于在基板（例如硅）的膨胀系数大于所述树脂（43）的下部。