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11 条记录 (耗时 0.01 秒)

    Solid-state imaging device
    2.
    发明公开
    Solid-state imaging device 失效
    固态图像拾取器件。

    公开(公告)号：EP0054244A1

    公开(公告)日：1982-06-23

    申请号：EP81110247.4

    申请日：1981-12-08

    申请人： Hitachi, Ltd.

    发明人： Ohba, Shinya ,  Nakai, Masaaki ,  Ozaki, Toshifumi ,  Takahashi, Kenji

    IPC分类号： H04N3/15 ,  H01L27/14

    CPC分类号： H04N5/374 ,  H01L27/14643

    摘要： A solid-stage imaging device comprises an array of picture elements (1,2) and a horizontal CTD shift register (18; 28; 38; 48). In a horizontal blanking period, two or more sets of signals from vertical signal output lines (4) coupled to the picture element array are stored in the horizontal CTD shift register. In a horizontal scanning period, the horizontal CTD shift register operates in a 3-phase (or 2-phase or 4-phase) driving fashion to deliver picture image information signal to its output part.

    Semiconductor memory having charge transfer device voltage amplifier
    4.
    发明公开
    Semiconductor memory having charge transfer device voltage amplifier 失效
    Halbleiterspeicher mit einemSpannungsverstärkerdes ladungsgekoppelten Typs。

    公开(公告)号：EP0139196A2

    公开(公告)日：1985-05-02

    申请号：EP84110638.8

    申请日：1984-09-06

    申请人： HITACHI, LTD.

    发明人： Aoki, Masakazu ,  Nakagome, Yoshinopbu ,  Horiguchi, Masashi ,  Ozaki, Toshifumi ,  Shimohigashi, Katsuhiro ,  Ikenaga, Shinichi

    IPC分类号： G11C7/00 ,  G11C11/40

    CPC分类号： G11C7/22 ,  G11C7/06 ,  H01L27/108

    摘要： A semiconductor memory includes a large number of memory cells arrayed in the shape of a matrix. A writing circuit (31), a voltage amplifier (32) and a sense amplifier (28) are successively connected to a data line (24,25) that connects input and output ends of the memory cells in an identical row. The voltage amplifier (32) is a charge transfer type voltage amplifier including two charge transfer gates and a driving gate located between them.

    摘要翻译： 半导体存储器包括排列成矩阵形状的大量存储单元。 写入电路（31），电压放大器（32）和读出放大器（28）被连续地连接到连接存储器单元的输入和输出端在相同行中的数据线（24,25）。 电压放大器（32）是包括两个电荷转移门和位于它们之间的驱动门的电荷转移型电压放大器。

    Solid-state imaging device
    7.
    发明公开
    Solid-state imaging device 失效
    固态成像装置。

    公开(公告)号：EP0055114A2

    公开(公告)日：1982-06-30

    申请号：EP81305996.1

    申请日：1981-12-21

    申请人： Hitachi, Ltd.

    发明人： Takemoto, Iwao ,  Ohba, Shinya ,  Aoki, Masakazu ,  Ando, Harushisa ,  Nakai, Masaaki ,  Ozaki, Toshifumi ,  Tamura, Masao ,  Miyao, Masanobu

    IPC分类号： H01L27/14

    CPC分类号： H01L27/14654

    摘要： A solid-state imaging device having picture elements each of which is. composed of a photoelectric conversion element (photodiode 13, 12) and a MOS transistor (13, 15, 34) as a swithing element and which are arranged in the form of a matrix, and a scanning mechanism which sequentially scans the picture elements to sequentially read out photoelectric conversion signals. To reduce smear and improve sensitivity, at least a high-impurity-concentration diffusion layer (34) serving as an output terminal of the MOS transistor if formed on an insulator layer (16) for isolating the elements. Thus, the tendency of the output terminal to receive noise photoelectrons from the substrate (12), and its parasitic capacitance (31), are both reduced.

    Solid-state imaging device
    8.
    发明公开
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：EP0029351A3

    公开(公告)日：1982-03-24

    申请号：EP80304072

    申请日：1980-11-13

    申请人： Hitachi, Ltd.

    发明人： Aoki, Masakazu ,  Takemoto, Iwao ,  Ando, Haruhisa ,  Izawa, Ryuichi ,  Ohba, Shinya ,  Hanamura, Shoji ,  Ozaki, Toshifumi ,  Kubo, Masaharu ,  Nakai, Masaaki ,  Takahashi, Kenji

    IPC分类号： H01L27/14 ,  H04N03/14

    CPC分类号： H01L27/14643 ,  H04N5/374

    摘要： A solid-state imaging device wherein a MOS sensor with a matrix of photodiodes (1) and vertical switching transistors (2) is employed for a photosensor part, a charge transfer device (CTD) shift register (42A, 42B) is employed for a read-out circuit, first and second transfer gates (44A, 44B, 45A, 45B) are connected between vertical signal output lines (4) and the CTD, and a reset gate (46A, 46B) is connected between a junction of the first and second transfer gates and a reset voltage line (BLDA, BLDB). A method is adopted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. Bias charges are introduced into the CTD at an input (41A, 41 B). At the signal transfer, the bias charges are dumped into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.

    Solid-state imaging device
    10.
    发明公开
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：EP0055114A3

    公开(公告)日：1984-05-02

    申请号：EP81305996

    申请日：1981-12-21

    申请人： Hitachi, Ltd.

    发明人： Takemoto, Iwao ,  Ohba, Shinya ,  Aoki, Masakazu ,  Ando, Harushisa ,  Nakai, Masaaki ,  Ozaki, Toshifumi ,  Tamura, Masao ,  Miyao, Masanobu

    IPC分类号： H01L27/14

    CPC分类号： H01L27/14654

    摘要： A solid-state imaging device having picture elements each of which is. composed of a photoelectric conversion element (photodiode 13, 12) and a MOS transistor (13, 15, 34) as a swithing element and which are arranged in the form of a matrix, and a scanning mechanism which sequentially scans the picture elements to sequentially read out photoelectric conversion signals. To reduce smear and improve sensitivity, at least a high-impurity-concentration diffusion layer (34) serving as an output terminal of the MOS transistor if formed on an insulator layer (16) for isolating the elements. Thus, the tendency of the output terminal to receive noise photoelectrons from the substrate (12), and its parasitic capacitance (31), are both reduced.