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    Liquid crystal display apparatus, semiconductor devices, and manufacturing methods therefor
    1.
    发明公开
    Liquid crystal display apparatus, semiconductor devices, and manufacturing methods therefor 失效
    Flüssigkristall-Anzeigevorrichtung，Halbleitervorrichtungen und Verfahren zu ihrer Herstellung

    公开(公告)号：EP0694804A2

    公开(公告)日：1996-01-31

    申请号：EP95111765.4

    申请日：1995-07-26

    申请人： HITACHI, LTD.

    发明人： Ono, Kikuo ,  Tsumura, Makoto ,  Ogawa, Kazuhiro ,  Sakuta, Hiroki ,  Suzuki, Masahiko ,  Kaneko, Toshiki ,  Nakayoshi, Yoshiaki ,  Onisawa, Kenichi ,  Hashimoto, Kenichi ,  Minemura, Tetsuro

    IPC分类号： G02F1/136 ,  H01L21/84

    CPC分类号： G02F1/1368 ,  G02F1/133512 ,  G02F1/136213 ,  G02F2001/136218 ,  H01L27/124 ,  H01L27/1259

    摘要： The invention relates to a bright image liquid crystal display apparatus, a semiconductor device and a manufacturing method therefor.
    The apparatus comprises gate lines (GL) formed on a substrate (SUB1) and an insulating film formed on the substrate, data lines (DL) formed so as to cross the gate lines, thin film transistors (TFTs) formed at the respective intersections of the gate lines with the data lines, and pixel electrodes (IT01) connected to the TFTs, wherein the central portion of the pixel electrodes is in contact with the substrate (SUB1) or the insulating film, and the peripheral portion of the pixel electrode is in contact with an insulating film which was the same layer as the gate insulating film (GI) of the (TFT). The end portion of the gate electrode of the TFT is tapered with a taper angle equal to or less than three times the taper angle at the end portion of the semiconductor pattern.

    摘要翻译： 本发明涉及一种亮影液晶显示装置，半导体装置及其制造方法。 该装置包括形成在基板（SUB1）上的栅极线（GL）和形成在基板上的绝缘膜，形成为跨越栅极线的数据线（DL），形成在各个交点处的薄膜晶体管 具有数据线的栅极线和连接到TFT的像素电极（IT01），其中像素电极的中心部分与衬底（SUB1）或绝缘膜接触，并且像素电极的周边部分是 与与（TFT）的栅极绝缘膜（GI）相同的层的绝缘膜接触。 TFT的栅电极的端部以等于或小于半导体图案的端部处的锥角的三倍的锥角渐缩。

    Liquid crystal display apparatus, semiconductor devices, and manufacturing methods therefor
    2.
    发明公开
    Liquid crystal display apparatus, semiconductor devices, and manufacturing methods therefor 失效
    液晶显示装置，半导体装置及其制造方法

    公开(公告)号：EP0694804A3

    公开(公告)日：1996-08-21

    申请号：EP95111765.4

    申请日：1995-07-26

    申请人： HITACHI, LTD.

    发明人： Ono, Kikuo ,  Tsumura, Makoto ,  Ogawa, Kazuhiro ,  Sakuta, Hiroki ,  Suzuki, Masahiko ,  Kaneko, Toshiki ,  Nakayoshi, Yoshiaki ,  Onisawa, Kenichi ,  Hashimoto, Kenichi ,  Minemura, Tetsuro

    IPC分类号： G02F1/136 ,  H01L21/84

    CPC分类号： G02F1/1368 ,  G02F1/133512 ,  G02F1/136213 ,  G02F2001/136218 ,  H01L27/124 ,  H01L27/1259

    摘要： The invention relates to a bright image liquid crystal display apparatus, a semiconductor device and a manufacturing method therefor. The apparatus comprises gate lines (GL) formed on a substrate (SUB1) and an insulating film formed on the substrate, data lines (DL) formed so as to cross the gate lines, thin film transistors (TFTs) formed at the respective intersections of the gate lines with the data lines, and pixel electrodes (IT01) connected to the TFTs, wherein the central portion of the pixel electrodes is in contact with the substrate (SUB1) or the insulating film, and the peripheral portion of the pixel electrode is in contact with an insulating film which was the same layer as the gate insulating film (GI) of the (TFT). The end portion of the gate electrode of the TFT is tapered with a taper angle equal to or less than three times the taper angle at the end portion of the semiconductor pattern.

    摘要翻译： 明亮图像液晶显示装置，半导体装置及其制造方法技术领域本发明涉及明亮图像液晶显示装置， 该装置包括形成在衬底（SUB1）上的栅极线（GL）和形成在衬底上的绝缘膜，形成为与栅极线交叉的数据线（DL），形成在各个交叉点处的薄膜晶体管（TFT） 具有数据线的栅极线和连接到TFT的像素电极（IT01），其中像素电极的中心部分与衬底（SUB1）或绝缘膜接触，并且像素电极的周边部分是 与与（TFT）的栅极绝缘膜（GI）相同的层的绝缘膜接触。 TFT的栅电极的端部锥形化，其锥角等于或小于半导体图案的端部处的锥角的三倍。