公开(公告)号：EP3780073A1

公开(公告)日：2021-02-17

申请号：EP19785253.6

申请日：2019-04-08

申请人： Hitachi High-Tech Corporation

发明人： IKEDA Ukyo ,  ONO Tetsuyoshi ,  NAKATSUCHI Hiroki ,  MIYAKE Masafumi

IPC分类号： H01L21/56 ,  G01N27/333 ,  G06K19/00 ,  H01L23/28 ,  H01L27/10

摘要： An electrode formed by molding a semiconductor device with resin. The electrode comprises: a first resin mold portion formed on a front surface of the semiconductor device and having a first thickness (t1) ; a second resin mold portion formed on a back surface of the semiconductor device and having a second thickness (t2) greater than the first thickness; and an exposed portion formed in a part of the first resin mold portion corresponding to an end of the semiconductor device.