公开(公告)号：EP4404454A1

公开(公告)日：2024-07-24

申请号：EP22869629.0

申请日：2022-05-10

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： MIMA, Akira ,  KAGEYAMA, Hiroshi ,  ARAI,Taiga ,  SAITO, Katsuaki ,  KAWASE, Daisuke ,  WADA, Takashi

IPC分类号： H02M7/48

CPC分类号： H02M7/48

摘要： Provided is a semiconductor module overcurrent detection device that, with a relatively simple circuit configuration, is capable of highly accurately detecting short-circuit current of a power semiconductor element in a semiconductor module that is configured by connecting a plurality of inverter circuits in parallel. A semiconductor module overcurrent detection device according the present invention detects an overcurrent of a semiconductor module in a parallel connection configuration that has a first inverter circuit on which a first upper arm and a first lower arm are mounted and a second inverter circuit which is connected in parallel with the first inverter circuit and on which a second upper arm and a second lower arm are mounted. The semiconductor module overcurrent detection device is characterized in that: the first inverter circuit has a first output terminal between the emitter of the first upper arm and the collector of the first lower arm; the second inverter circuit has a second output terminal between the emitter of the second upper arm and the collector of the second lower arm; the first output terminal and the second output terminal are connected via a wire; an output wire to the outside is attached at the middle point between the first output terminal and the second output terminal; the wire inductance between the first output terminal and the middle point is substantially equal to the wire inductance between the second output terminal and the middle point; the potential difference between the first output terminal and the second output terminal is detected; and when the detected potential difference is larger than a predetermined threshold value, it is determined that an overcurrent is generated.