公开(公告)号：EP4425565A2

公开(公告)日：2024-09-04

申请号：EP24160704.3

申请日：2024-02-29

申请人： Hon Hai Precision Industry Co., Ltd.

发明人： HUNG, Chia-Lung ,  HSIAO, Yi-Kai ,  KUO, Hao-Chung

IPC分类号： H01L29/06 ,  H01L21/04 ,  H01L29/423 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/7813 ,  H01L21/049 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/42368

摘要： A method of manufacturing a semiconductor device includes providing a substrate, in which the substrate is SiC base. The substrate, from bottom to top, sequentially includes an N-type heavy doping base layer, an N-type light doping layer, a P-well region, and an N-type heavy doping layer. The substrate is etched by using a patterned mask to form a gate trench and a channel region defined by the gate trench. The channel region is shielded by the patterned mask. An ion implant is performed to the gate trench such that a shielding implant layer is formed on the bottom of the gate trench. An oxidation process is performed to the gate trench thereby forming a gate oxide layer. The oxidation rate at the bottom of the gate trench is faster than the oxidation rate at the sidewall of the gate trench. A semiconductor device is also provided.

公开(公告)号：EP4425565A3

公开(公告)日：2024-09-18

申请号：EP24160704.3

申请日：2024-02-29

申请人： Hon Hai Precision Industry Co., Ltd.

发明人： HUNG, Chia-Lung ,  HSIAO, Yi-Kai ,  KUO, Hao-Chung

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/12

CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/7813 ,  H01L21/049 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/42368

摘要： A method of manufacturing a semiconductor device includes providing a substrate, in which the substrate is SiC base. The substrate, from bottom to top, sequentially includes an N-type heavy doping base layer, an N-type light doping layer, a P-well region, and an N-type heavy doping layer. The substrate is etched by using a patterned mask to form a gate trench and a channel region defined by the gate trench. The channel region is shielded by the patterned mask. An ion implant is performed to the gate trench such that a shielding implant layer is formed on the bottom of the gate trench. An oxidation process is performed to the gate trench thereby forming a gate oxide layer. The oxidation rate at the bottom of the gate trench is faster than the oxidation rate at the sidewall of the gate trench. A semiconductor device is also provided.