公开(公告)号：EP3623777A1

公开(公告)日：2020-03-18

申请号：EP19195762.0

申请日：2019-09-05

申请人： Honeywell International Inc.

发明人： KATTI, Romney R. ,  AMBROSE, Edward F.

IPC分类号： G01H11/02 ,  G01H11/06 ,  G01L1/20

摘要： A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, an elastic layer, and a tunnel barrier. The free layer is spaced apart from the pinned layer by the tunnel barrier and the elastic layer. The processing circuitry is configured to measure a resistance at the MTJ element and determine whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.