公开(公告)号：EP2866923A1

公开(公告)日：2015-05-06

申请号：EP13736514.4

申请日：2013-06-28

申请人： I3 Membrane GmbH ,  Helmholtz-Zentrum Dresden - Rossendorf e.V.

发明人： KOLITSCH, Andreas ,  ROGOZIN, Anatoli ,  BRINKE-SEIFERTH, Stephan

IPC分类号： B01D67/00 ,  B01D71/02

CPC分类号： B01D67/006 ,  B01D67/0053 ,  B01D71/022 ,  B01D2323/00 ,  B01D2323/35 ,  H01M2/1646 ,  H01M8/0289

摘要： The present invention relates to a process for producing a porous metal membrane (pore size 10 nm and 1 µm), a metal membrane of this type, the use of the metal membrane and also corresponding filter modules. The porosity should be so high that it is significantly superior to the ion track process. Furthermore, the use of chemicals should be dispensed with where possible. The Dice is 1‑20 microns. According to the invention, the plasma immersion ion implantation process is utilized by bombarding a very thin metal foil with noble gas ions accelerated by means of a first accelerating voltage, in particular from both sides. The ion current is selected so that supersaturation occurs in the metal foil. Pores, in particular under the metal surface, are then formed by bubble segregation after supersaturation. Opening of the pores formed under the metal surface by ion implantation is effected by atomization of the surface by means of bombardment with noble gas ions using a second accelerating voltage which is lower than the first accelerating voltage.