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1.发明公开STRUCTURE AND METHOD FOR Vt TUNING AND SHORT CHANNEL CONTROL WITH HIGH K/METAL GATE MOSFETs 有权结构与方法VT-表决和短沟道控制与高K值金属栅结构的MOSFET
公开(公告)号：EP2641271A4
公开(公告)日：2014-03-19
申请号：EP11846296
申请日：2011-09-15
Applicant: IBM
Inventor： WANG XINLIN , CHEN XIANGDONG , CAI JIN
IPC: H01L29/78 , H01L21/336 , H01L21/8238 , H01L29/10
CPC classification number: H01L21/823892 , H01L21/823807 , H01L29/1041
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