公开(公告)号：EP4345823A1

公开(公告)日：2024-04-03

申请号：EP22214910.6

申请日：2022-12-20

申请人： IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik ,  Brandenburgische Technische Universität Cottbus-Senftenberg

发明人： Uhlmann, Max ,  Kahmen, Gerhard ,  Ostrovskyy, Philip ,  Reichenbach, Marc ,  Fritscher, Markus

IPC分类号： G11C13/00 ,  G11C11/56 ,  G11C11/54 ,  G06N3/063

摘要： A resistive random access memory (RRAM) subcell comprises a subcell circuit arrangement having an electrical series connection of interconnected or interconnectable memristors. Each of the memristors is electrically programmable to assume a selected one of a plurality of memristor states, each memristor state being associated with a respective memristor resistance value or memristor resistance-value range of the given memristor. The subcell circuit arrangement is electrically drivable to assume a selected one of a set of memory subcell states for storing information, the set of memory subcell states comprising those combinations of memristor states in the subcell circuit arrangement, which result from the electrical series connection of the memristors and have mutually distinguishable subcell resistance values or subcell resistance-value ranges. The electrical circuit arrangement of the RRAM subcell is operated using a single bitline.