公开(公告)号：EP1415332B1

公开(公告)日：2012-01-25

申请号：EP02779254.8

申请日：2002-07-25

申请人： IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik

发明人： TILLACK, Bernd ,  WOLANSKY, Dirk ,  RITTER, Georg ,  GRABOLLA, Thomas

IPC分类号： H01L21/20 ,  H01L21/205 ,  C23C16/32 ,  C23C16/54

CPC分类号： H01L21/02529 ,  C23C16/0218 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658

摘要： The invention relates to a method and devices for the production of diffusion-inhibiting epitactic semiconductor layers. The aim of the invention is to provide a method and devices which are used to produce thin diffusion-inhibiting epitactic semiconductor layers on large substrates commonly used in semiconductor engineering at a high industrial manufacturing throughput rate for typical HBT stacks. According to the invention, the surfaces of the semiconductor substrates to be coated are initially cleaned. The cleaned semiconductor substrates are then heated to a first temperature (pre-bake temperature), which is higher than the temperature of the subsequent step, in a low-pressure batch reactor and the surfaces to be coated undergo a hydrogen pre-bake process at a lower, same or higher reactor pressure in comparison with the subsequent procedural step in order to remove air oxide and other impurities. In the next step, the pre-treated semiconductor substrates are heated to a second temperature which is lower in comparison with the previous procedural step (deposition temperature) in a low pressure, hot or warm wall batch reactor. Once a thermodynamic balance is achieved for the surfaces to be coated, the diffusion-inhibiting semiconductor layers are deposited in a chemical deposition process (CVD) at a reactor pressure which is higher, the same as or lower than that of the previous procedural step.