公开(公告)号：EP3278370B1

公开(公告)日：2020-07-29

申请号：EP16711849.6

申请日：2016-03-25

申请人： IMEC VZW

发明人： BORGERS, Tom ,  SZLUFCIK, Jozef

IPC分类号： H01L31/05 ,  H01L31/048

公开(公告)号：EP0960443B1

公开(公告)日：2004-11-03

申请号：EP97954669.4

申请日：1997-12-22

申请人： IMEC vzw

发明人： HORZEL, Jörg ,  HONORE, Mia ,  NIJS, Johan ,  SZLUFCIK, Jozef

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/022425 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate (2) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate (2); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate (2) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate (2), the dopant from said solids-based dopant source diffusing directly into said substrate (2) to form a first diffusion region (12) and, at the same time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate (2) to form a second diffusion region (15) in at least some areas of said substrate (2) not covered by said pattern; and step 3) forming a metal contact pattern (20) substantially in alignment with said first diffusion region (12) without having etched said second diffusion region (15) substantially.

公开(公告)号：EP0960443A1

公开(公告)日：1999-12-01

申请号：EP97954669.0

申请日：1997-12-22

申请人： IMEC vzw

发明人： HORZEL, Jörg ,  HONORE, Mia ,  NIJS, Johan ,  SZLUFCIK, Jozef

IPC分类号： H01L31

CPC分类号： H01L31/1804 ,  H01L31/022425 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate (2) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate (2); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate (2) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate (2), the dopant from said solids-based dopant source diffusing directly into said substrate (2) to form a first diffusion region (12) and, at the same time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate (2) to form a second diffusion region (15) in at least some areas of said substrate (2) not covered by said pattern; and step 3) forming a metal contact pattern (20) substantially in alignment with said first diffusion region (12) without having etched said second diffusion region (15) substantially.

公开(公告)号：EP3278370A1

公开(公告)日：2018-02-07

申请号：EP16711849.6

申请日：2016-03-25

申请人： IMEC VZW

发明人： BORGERS, Tom ,  SZLUFCIK, Jozef

IPC分类号： H01L31/05 ,  H01L31/048

摘要： A method and module for electrically contacting a photovoltaic cell and for electrically interconnecting such cell is disclosed. In one aspect, the method includes providing a woven fabric comprising a plurality of electrically conductive wires being provided in a single one of a warp direction and a weft direction. The woven fabric further includes a plurality of polymer yarns being provided in at least the other one of the warp direction and the weft direction. In some embodiments, the woven fabric is brought into physical contact with a surface of a photovoltaic cell including a plurality of metal contacts, and afterwards a heating step is performed, thereby establishing an electrical connection between the respective metal contacts and at least one electrically conductive wire and thereby liquefying the plurality of polymer yarns and transforming them into an encapsulation layer.

公开(公告)号：EP3235012A1

公开(公告)日：2017-10-25

申请号：EP15813712.5

申请日：2015-12-02

申请人： IMEC VZW

发明人： BORGERS, Tom ,  SZLUFCIK, Jozef

IPC分类号： H01L31/05

CPC分类号： H01L31/0512 ,  H01L31/0516 ,  Y02E10/50

摘要： A method is provided for electrically connecting a plurality of contact areas located on a surface of a photovoltaic cell, the method comprising: positioning on the surface of the photovoltaic cell an electrical connector, thereby covering the plurality of contact areas with the electrical connector, and electrically connecting the electrical connector to the plurality of contact areas, wherein the electrical connector comprises an electrically conductive core and an electrically insulating enveloping part, the enveloping part comprising electrically insulating threads enveloping the electrically conductive core and leaving the electrically conductive core partially uncovered. The electrical connection may for example be established by soldering or by means of a conductive adhesive. A method is provided for electrically connecting back-contact cells within a photovoltaic module using such electrical connectors.

摘要翻译： 提供了一种用于电连接位于光伏电池的表面上的多个接触区域的方法，所述方法包括：在光伏电池的表面上定位电连接器，从而用电连接器覆盖多个接触区域，以及 将所述电连接器电连接到所述多个接触区域，其中所述电连接器包括导电芯和电绝缘包封部分，所述包封部分包括电绝缘线，所述电绝缘线包覆所述导电芯且使所述导电芯部分地露出。 电连接例如可以通过焊接或通过导电粘合剂来建立。 提供了一种使用这种电连接器电连接光伏模块内的背接触单元的方法。

公开(公告)号：EP2215663A2

公开(公告)日：2010-08-11

申请号：EP08856838.1

申请日：2008-12-02

申请人： IMEC ,  Photovoltech

发明人： DROSS, Frédéric ,  ALLEBÉ, Christophe ,  SZLUFCIK, Jozef ,  BEAUCARNE, Guy

IPC分类号： H01L31/0224

CPC分类号： H01L31/1804 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02245 ,  Y02E10/547 ,  Y02P70/521

摘要： A photovoltaic device in a semiconductor substrate, has a radiation receiving front surface and a rear surface, a first region of one conductivity type (29), and a second region with the opposite conductivity type (20) adjacent to the front surface, and an antireflection layer (27). The rear surface is covered by a dielectric layer (39) covering also an inside surface of the via. The front surface has current collecting conductive contacts (23) and the rear surface has conductive contacts (31) extending through the said dielectric. A conductive path is provided in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed, and the same dielectric serves to insulate, provide thermal protection for the semiconductor, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.

公开(公告)号：EP2215663B2

公开(公告)日：2016-08-17

申请号：EP08856838.1

申请日：2008-12-02

申请人： IMEC

发明人： DROSS, Frédéric ,  ALLEBÉ, Christophe ,  SZLUFCIK, Jozef ,  BEAUCARNE, Guy

IPC分类号： H01L31/0224

CPC分类号： H01L31/1804 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02245 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2215663B1

公开(公告)日：2011-05-25

申请号：EP08856838.1

申请日：2008-12-02

申请人： IMEC ,  Photovoltech

发明人： DROSS, Frédéric ,  ALLEBÉ, Christophe ,  SZLUFCIK, Jozef ,  BEAUCARNE, Guy

IPC分类号： H01L31/0224

CPC分类号： H01L31/1804 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02245 ,  Y02E10/547 ,  Y02P70/521

摘要： A photovoltaic device in a semiconductor substrate, has a radiation receiving front surface and a rear surface, a first region of one conductivity type (29), and a second region with the opposite conductivity type (20) adjacent to the front surface, and an antireflection layer (27). The rear surface is covered by a dielectric layer (39) covering also an inside surface of the via. The front surface has current collecting conductive contacts (23) and the rear surface has conductive contacts (31) extending through the said dielectric. A conductive path is provided in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed, and the same dielectric serves to insulate, provide thermal protection for the semiconductor, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.