公开(公告)号：EP4199115A1

公开(公告)日：2023-06-21

申请号：EP21215532.9

申请日：2021-12-17

申请人： IMEC VZW

发明人： SMETS, Quentin ,  RADU, Iuliana ,  SCHRAM, Tom ,  AHMED, Zubair

IPC分类号： H01L29/778 ,  H01L29/417 ,  H01L21/336 ,  H01L29/16 ,  H01L29/41 ,  B82Y10/00 ,  H01L29/423 ,  H01L29/24

摘要： According to an aspect of the present inventive concept there is provided a 2D transistor device (100). The 2D transistor device (100) comprises: a 2D semiconductor layer (110) comprising a source-side extension portion (112), a drain-side extension portion (116) and a channel portion (114) extending between the extension portions (112, 116) along a channel direction (300); a gate electrode (120) arranged along and being coextensive with the channel portion (114); a source-side 2D metal contact (132) arranged in abutment with the source-side extension portion (112) and spaced apart from the gate electrode (120) along the channel direction (300); and a drain-side 2D metal contact (136) arranged in abutment with the drain-side extension portion (116) and spaced apart from the gate electrode (120) along the channel direction (300).
A method (150) for forming such a device (100) and a system (200) comprising at least two such devices (100) are also provided.