公开(公告)号：EP1859488B1

公开(公告)日：2018-11-21

申请号：EP06707582.0

申请日：2006-03-16

申请人： IMEC VZW

发明人： AGOSTINELLI, Guido ,  BEAUCARNE, Guy ,  CHOULAT, Patrick

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/02

CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for the production of a solar cell is disclosed , comprising the steps of providing a silicon substrate having a front main surface and a back main surface; depositing a dielectric layer on the back main surface; depositing a passivation layer comprising hydrogenated SiN on top of the dielectric layer; forming holes in the dielectric layer and the SiN:H layer; depositing a layer of contacting material onto the dielectric layer, hereby filling, the holes; and applying a high temperature step. Furthermore a solar cell device is disclosed comprising a silicon substrate having a front main surface and a back main surface; a dielectric layer on the back main surface; a passivation layer comprising hydrogenated SiN on top of the dielectric layer; holes through the dielectric layer and theSiN:H layer; and layer of contacting material onto the dielectric layer, the layer also filling the holes.