公开(公告)号：EP3886176A1

公开(公告)日：2021-09-29

申请号：EP20207504.0

申请日：2020-11-13

申请人： INTEL Corporation

发明人： Bouche, Guillaume ,  Wei, Andy Chih-Hung ,  Ma, Sean T.

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/417

摘要： Discussed herein is device contact sizing in integrated circuit (IC) structures. In some embodiments, an IC structure may include: a first source/drain (S/D) contact (164-1) in contact with a first S/D region (128), and a second S/D contact (164-2) in contact with a second S/D region (130), wherein the first S/D region (128) and the second S/D region (130) have a same length, and the first S/D contact (164-1) and the second S/D contact (164-2) have different lengths (252-1, 252-2).