公开(公告)号：EP4210101A3

公开(公告)日：2023-11-08

申请号：EP22206295.2

申请日：2022-11-09

申请人： INTEL Corporation

发明人： GEIGER, Richard ,  Panagopoulos, Georgios ,  Rauh, Johannes ,  Gossner, Harald

IPC分类号： H01L23/528 ,  H01L21/74 ,  H01L21/768 ,  H01L23/535 ,  H01L27/02 ,  H01L27/092

摘要： IC devices including IC devices including BPRs that form metal-semiconductor junctions with semiconductor sections where the BPRs are partially buried are disclosed. An example IC device includes a first layer comprising semiconductor structures, such as fins, nanowires, or nanoribbons. The IC device also includes a layer comprising an electrically conductive material and coupled to the semiconductor structures. The IC device further includes a support structure comprising a BPR and a semiconductor section. The BPR contacts with the semiconductor section and forms a metal-semiconductor junction. The metal-semiconductor junction constitutes a Schottky barrier for electrons. The IC device may include a SCR including a sequence of p-well, n-well, p-well, and n-well with Schottky barriers in the first p-well and the second n-well. The Schottky barrier may also be used as a guard ring to extract injected charge carriers.

公开(公告)号：EP4210101A2

公开(公告)日：2023-07-12

申请号：EP22206295.2

申请日：2022-11-09

申请人： INTEL Corporation

发明人： GEIGER, Richard ,  Panagopoulos, Georgios ,  Rauh, Johannes ,  Gossner, Harald

IPC分类号： H01L23/528 ,  H01L21/74 ,  H01L21/768 ,  H01L23/535 ,  H01L27/02 ,  H01L27/092

摘要： IC devices including IC devices including BPRs that form metal-semiconductor junctions with semiconductor sections where the BPRs are partially buried are disclosed. An example IC device includes a first layer comprising semiconductor structures, such as fins, nanowires, or nanoribbons. The IC device also includes a layer comprising an electrically conductive material and coupled to the semiconductor structures. The IC device further includes a support structure comprising a BPR and a semiconductor section. The BPR contacts with the semiconductor section and forms a metal-semiconductor junction. The metal-semiconductor junction constitutes a Schottky barrier for electrons. The IC device may include a SCR including a sequence of p-well, n-well, p-well, and n-well with Schottky barriers in the first p-well and the second n-well. The Schottky barrier may also be used as a guard ring to extract injected charge carriers.