公开(公告)号：EP4261323A1

公开(公告)日：2023-10-18

申请号：EP23161789.5

申请日：2023-03-14

申请人： IQE plc

发明人： Geen, Matthew ,  Pelzel, Rodney

IPC分类号： C23C16/30 ,  C30B25/02 ,  C30B29/40

摘要： A method 1300 of forming a layer 210 includes introducing a Group III precursor 112, 212, 512 in a reactor 100, 100', introducing a hydride Group V precursor 114, 214, 514 in the reactor, and introducing a metal-organic Group V precursor 116, 216, 516 in the reactor to form the layer 210. The method can further include mixing the hydride Group V precursor and the metal-organic Group V precursor 522. Advantageously, the layer and method of forming the layer utilize mixed Group V precursors, improve uniformity, decrease thermal sensitivity of the end material, normalize concentration profiles of precursors, improve yield, increase manufacturing efficiency, improve control of III-V ratios (e.g., pressure, growth rate, flux), and reduce manufacturing costs.