公开(公告)号：EP1687855A1

公开(公告)日：2006-08-09

申请号：EP04802829.4

申请日：2004-11-25

申请人： Infineon Technologies AG

发明人： HAPP, Thomas ,  PINNOW, Cay-Uwe ,  SYMANCZYK, Ralf ,  UFERT, Klaus-Dieter

IPC分类号： H01L45/00 ,  H01L27/24 ,  G11C11/34

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144 ,  H01L45/1666

摘要： The invention relates to an integrated semiconductor memory (1) comprising a storage medium (6) that is located between two electrodes (10, 20) and that takes the form, for example, of a phase change medium. The storage medium (6) can adopt a first state or a second state by means of an electric current and can thus store information. According to the invention, the memory is provided with a layer plane (L) in which foreign particles of a material (4) are embedded, causing a local increase in the current density in the storage medium and a reduction of the programming current that is required to perform the reprogramming procedure. The current consumption of storage cells containing a phase-change medium thus decreases, so that for the first time such cells can be configured with minimum dimensions, together with other components such as transistors, and integrated into a single semiconductor circuit, instead of having to be provided in separate sub-circuits.