SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE COMPRISING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR CHIP

    公开(公告)号:EP4398316A1

    公开(公告)日:2024-07-10

    申请号:EP23216357.6

    申请日:2023-12-13

    IPC分类号: H01L33/00 H01L33/06 H01L33/10

    摘要: A semiconductor element (100, 100A, 100B, 100C, 100D) includes a quantum well structure (130). The quantum well structure (130) of the semiconductor element (100, 100A, 100B, 100C, 100D) is disposed between a first type semiconductor layer (110) and a second type semiconductor layer (120), and includes a pair of barrier layers (139) and a first active layer (131) and a second active layer (132) disposed between the pair of barrier layers (139). The first active layer (131) and the second active layer (132) respectively include a group 13 elements of different concentrations. The first reflection unit (140) is disposed under the first type semiconductor layer (110). The second reflection (150) unit is disposed on the second type semiconductor layer (120), and defines a resonant cavity (102) with the first reflection unit (140). The quantum well structure (130) is arranged in the resonant cavity (102).

    ELECTRONIC DEVICE
    2.
    发明公开
    ELECTRONIC DEVICE 审中-公开

    公开(公告)号:EP4343866A1

    公开(公告)日:2024-03-27

    申请号:EP23195299.5

    申请日:2023-09-05

    IPC分类号: H01L33/58 H01L25/075

    摘要: An electronic device is provided and includes a circuit substrate and a light emitting chip. The light emitting chip is disposed on the circuit substrate, and the light emitting chip includes a first light emitting diode and a second light emitting diode electrically connected to each other. The first light emitting diode has a first light distribution curve, the second light emitting diode has a second light distribution curve, and the first light distribution curve is different from the second light distribution curve.