公开(公告)号：EP4290565A1

公开(公告)日：2023-12-13

申请号：EP23171920.4

申请日：2023-05-05

申请人： Intel Corporation

发明人： RESHOTKO, Miriam ,  KARPOV, Elijah V. ,  ANDERS, Mark A. ,  AULUCK, Gauri ,  SUNDARARAJAN, Shakuntala ,  Makowski, Michael ,  BARRETT, Caleb

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/522

摘要： Adjacent interconnect features are in staggered, vertically spaced positions, which accordingly reduces their capacitive coupling within a level of interconnect metallization. Adjacent interconnect features may comprise a plurality of first interconnect lines with spaces therebetween. A dielectric material is over the first interconnect lines and within the spaces between the first interconnect lines. Resultant topography in the dielectric material defines a plurality of trenches between the first interconnect lines. The adjacent interconnect features further comprise a plurality of second interconnect lines interdigitated with the first interconnect lines that occupy at least a portion of the trenches between individual ones of the first interconnect lines.

公开(公告)号：EP4016584A1

公开(公告)日：2022-06-22

申请号：EP21197096.7

申请日：2021-09-16

申请人： Intel Corporation

发明人： Makowski, Michael ,  Naskar, Sudipto ,  Pearce, Ryan ,  Chandrasekhar, Nita ,  Lee, Minyoung ,  Parker, Christopher

IPC分类号： H01L21/02 ,  H01L21/318 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088

摘要： Transistors structures comprising a semiconductor features and dielectric material comprising silicon and oxygen in gaps or spaces between the features. The dielectric material may fill the gaps from bottom-up with an atomic layer deposition (ALD) process that includes a silicon deposition phase, and an oxidation phase augmented by N 2 :NH 3 plasma activated nitrogen species. Being plasma activated, the nitrogen species have short mean free paths, and therefore preferentially passivate surfaces with low aspect ratios. This aspect-ratio dependent passivation may increase an energy barrier to surface reactions with a silicon precursor, resulting in a concomitant differential in deposition rate. With N 2 :NH 3 plasma passivation, deposited dielectric material may have a nitrogen concentration that varies by at least order of magnitude as a function of the aspect ratio of the filled gaps.