公开(公告)号：EP4439641A1

公开(公告)日：2024-10-02

申请号：EP23216038.2

申请日：2023-12-12

申请人： Intel Corporation

发明人： NARIMANNEZHAD, Alireza ,  KAMYSBAYEV, Vladislav ,  QIN, Xiaoye ,  FERDOUS, Sunzida ,  PATEL, Reken

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/76834 ,  H01L21/76843

摘要： A low-leakage oxide dielectric material with high elastic modulus is deposited directly upon an oxidizable feature with a polycyclic PE-ALD process that limits the formation of an oxide on the feature. A precursor of one or more constituents, such as silicon, may be deposited upon a workpiece during a deposition phase, and the absorbed precursor(s) may be oxidized during a first oxidation phase under more conservative conditions until a first film thickness is achieved. Subsequently, absorbed precursor(s) may be oxidized during a second oxidation phase under more aggressive conditions to arrive at a total film thickness. Transistor contact metal, which may provide local interconnection between source or drain terminals of multiple transistors, may maintain high electrical conductivity after being electrically insulated with such a low-leakage film.