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公开(公告)号：EP0431973A3
公开(公告)日：1992-07-22
申请号：EP90313351.0
申请日：1990-12-07
发明人： Fukuzawa, Tadashi , Kano, Satoru S. , Kumata, Kiyoshi , Lee, Victor Y. , Schellenberg, Franklin Mark , Takahashi, Yutaka
IPC分类号： G02F1/35
CPC分类号： B82Y20/00 , G02F1/3556
摘要： The invention relates to a nonlinear optical device comprising a film structure (2) coated on a substrate (1) without interposition of adhesive. According to the invention the device is characterised in that the film structure comprises a modulated intercalation structure consisting of a layer of semi-conductor material and a layer of organic material, the layers having different energy gaps and the modulated structure being a super lattice structure. The invention also relates to a method of manufacturing a nonlinear optical device comprising dissolving an organic material in a solvent, and spin coating the solution onto a substrate and thereby forming an organic material film with one of its crystal axes oriented in the direction normal to the substrate, the film having a modulated structure of the two types of layers alternately intercalated and differing in energy gap in the direction.
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2.发明公开Nonlinear optical device and method of manufacturing 失效Nichtlineare optische Vorrichtungen und Herstellungsverfahren。
公开(公告)号：EP0431973A2
公开(公告)日：1991-06-12
申请号：EP90313351.0
申请日：1990-12-07
发明人： Fukuzawa, Tadashi , Kano, Satoru S. , Kumata, Kiyoshi , Lee, Victor Y. , Schellenberg, Franklin Mark , Takahashi, Yutaka
IPC分类号： G02F1/35
CPC分类号： B82Y20/00 , G02F1/3556
摘要： The invention relates to a nonlinear optical device comprising a film structure (2) coated on a substrate (1) without interposition of adhesive.
According to the invention the device is characterised in that the film structure comprises a modulated intercalation structure consisting of a layer of semi-conductor material and a layer of organic material, the layers having different energy gaps and the modulated structure being a super lattice structure.
The invention also relates to a method of manufacturing a nonlinear optical device comprising dissolving an organic material in a solvent, and spin coating the solution onto a substrate and thereby forming an organic material film with one of its crystal axes oriented in the direction normal to the substrate, the film having a modulated structure of the two types of layers alternately intercalated and differing in energy gap in the direction.摘要翻译： 本发明涉及一种非线性光学装置，其包括涂覆在基板（1）上而不插入粘合剂的薄膜结构（2）。 根据本发明，该装置的特征在于该膜结构包括由半导体材料层和有机材料层组成的调制插层结构，该层具有不同的能隙，调制结构是超晶格结构。 本发明还涉及一种制造非线性光学装置的方法，包括将有机材料溶解在溶剂中，并将溶液旋涂到基底上，从而形成有机材料膜，其中一个晶轴位于垂直于 衬底，该膜具有交替插入的两种类型的层的调制结构，并且在该方向上的能隙不同。
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公开(公告)号：EP0583115B1
公开(公告)日：1996-12-04
申请号：EP93306018.8
申请日：1993-07-29
发明人： Owa, Soichi , Kumata, Kiyoshi , Kano, Satoru S.
IPC分类号： G02F1/35
CPC分类号： B82Y20/00 , G02F1/01725 , G02F1/3515 , G02F1/3534 , G02F1/3556 , G02F1/377 , G02F2001/3548
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公开(公告)号：EP0431974A3
公开(公告)日：1992-02-12
申请号：EP90313352.8
申请日：1990-12-07
CPC分类号： H01S5/026 , G02F1/2955 , H01S5/0624 , H01S5/06243
摘要： The present invention relates to a light beam deflector comprising a semi-conductor light beam deflecting device (4) adapted to receive an incident beam of light (5). According to the invention the semi-conductor device comprises a planar waveguide type thin film grating deflector (4) formed in a superlattice structure and including electrodes, such that if a variable voltage is applied to the electrodes the angle through which an incident beam of light can be deflected is varied. The invention also relates to a light beam deflecting device comprising a light beam deflector (4) as above and a laser source (1, 1).
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公开(公告)号：EP0431973B1
公开(公告)日：1996-02-28
申请号：EP90313351.0
申请日：1990-12-07
发明人： Fukuzawa, Tadashi , Kano, Satoru S. , Kumata, Kiyoshi , Lee, Victor Y. , Schellenberg, Franklin Mark , Takahashi, Yutaka
IPC分类号： G02F1/35
CPC分类号： B82Y20/00 , G02F1/3556
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公开(公告)号：EP0431974B1
公开(公告)日：1995-04-05
申请号：EP90313352.8
申请日：1990-12-07
CPC分类号： H01S5/026 , G02F1/2955 , H01S5/0624 , H01S5/06243
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公开(公告)号：EP0583115A1
公开(公告)日：1994-02-16
申请号：EP93306018.8
申请日：1993-07-29
发明人： Owa, Soichi , Kumata, Kiyoshi , Kano, Satoru S.
IPC分类号： G02F1/35
CPC分类号： B82Y20/00 , G02F1/01725 , G02F1/3515 , G02F1/3534 , G02F1/3556 , G02F1/377 , G02F2001/3548
摘要： This invention is intended to provide a nonlinear optical device with sufficiently high nonlinearity for efficient wavelength conversion or optical modulation.
The nonlinear optical device according to this invention comprises a substrate and material layers disposed thereupon, at least a portion of said material layers being alternate insulator layers and semiconductor layers comprising a multi-quantum-well structure, the potential for electrons in said semiconductor layers being asymmetric in the z-direction normal to said substrate.
A quantum well structure that uses an insulator layer as the barrier layer and a semiconductor layer as the well layer satisfies the requirements of a well depth of 3 eV or more, and of a difference between the minimum energy level (e₁) of the electrons in the conduction band and the maximum energy level (h₁) of the electrons in the valence band of 3 eV or more, whereby the device is transparent for visible light, including second harmonic generated blue light.摘要翻译： 本发明旨在提供一种具有足够高的非线性的非线性光学器件，用于有效的波长转换或光学调制。 根据本发明的非线性光学器件包括衬底和设置在其上的材料层，所述材料层的至少一部分是交替的绝缘体层和包括多量子阱结构的半导体层，所述半导体层中的电子的电位为 在垂直于所述衬底的z方向上不对称。 使用绝缘体层作为阻挡层和作为阱层的半导体层的量子阱结构满足3eV以上的阱深度和电子的最小能级（e1）之间的差异的要求， 价带中的电子的导带和最大能级（h1）为3eV以上，由此该装置对于包括二次谐波产生的蓝光的可见光是透明的。
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公开(公告)号：EP0431974A2
公开(公告)日：1991-06-12
申请号：EP90313352.8
申请日：1990-12-07
CPC分类号： H01S5/026 , G02F1/2955 , H01S5/0624 , H01S5/06243
摘要： The present invention relates to a light beam deflector comprising a semi-conductor light beam deflecting device (4) adapted to receive an incident beam of light (5).
According to the invention the semi-conductor device comprises a planar waveguide type thin film grating deflector (4) formed in a superlattice structure and including electrodes, such that if a variable voltage is applied to the electrodes the angle through which an incident beam of light can be deflected is varied.
The invention also relates to a light beam deflecting device comprising a light beam deflector (4) as above and a laser source (1, 1).摘要翻译： 本发明涉及一种光束偏转器，其包括适于接收入射光束（5）的半导体光束偏转装置（4）。 根据本发明，半导体器件包括形成在超晶格结构中并包括电极的平面波导型薄膜光栅偏转器（4），使得如果向电极施加可变电压，则入射光束的角度 可以偏转变化。 本发明还涉及包括如上所述的光束偏转器（4）和激光源（1,1）的光束偏转装置。
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