-
1.发明公开
公开(公告)号：EP0137209A3
公开(公告)日：1987-07-29
申请号：EP84109528
申请日：1984-08-10
发明人： Ahlgren, David Cutler , Deines, John Louis , Hearn, Eric White , Kulkarni, Murlidhar Vasudeo , Montillo, Francis Joseph , Poponiak, Michael Robert , Wang, James Jen-Ho
摘要： The semiconductor silicon wafer contains a small amount of oxygen and has a carbon concentration of greater than about 4 ppm. Wafers of said kind are provided by slicing the tall part of a melt-grown silicon crystal into wafers and subsequently selecting from the produced wafers those having a carbon concentration of greater than 4 ppm. These wafers are applied for producing integrated circuit devices by means of essentially known manufacturing procedures. The formed integrated circuit devices have a low device-leakage current.
摘要翻译： 半导体硅晶片含有少量的氧并具有大于约4ppm的碳浓度。 通过将熔融生长的硅晶体的尾部切片成晶片并随后从生成的晶片中选择碳浓度大于4ppm的晶片来提供所述种类的晶片。 这些晶片通过基本上已知的制造方法应用于制造集成电路器件。 形成的集成电路器件具有低的器件漏电流。
-
2.发明公开
公开(公告)号：EP0137209A2
公开(公告)日：1985-04-17
申请号：EP84109528.4
申请日：1984-08-10
发明人： Ahlgren, David Cutler , Deines, John Louis , Hearn, Eric White , Kulkarni, Murlidhar Vasudeo , Montillo, Francis Joseph , Poponiak, Michael Robert , Wang, James Jen-Ho
摘要： The semiconductor silicon wafer contains a small amount of oxygen and has a carbon concentration of greater than about 4 ppm.
Wafers of said kind are provided by slicing the tall part of a melt-grown silicon crystal into wafers and subsequently selecting from the produced wafers those having a carbon concentration of greater than 4 ppm. These wafers are applied for producing integrated circuit devices by means of essentially known manufacturing procedures. The formed integrated circuit devices have a low device-leakage current.摘要翻译： 半导体硅晶片含有氧少量并具有大于约4ppm的碳浓度。 所述儿童的晶片通过切割熔融生长的硅晶体的尾部为晶片，并随后从所产生的晶片的那些具有大于4ppm的碳浓度选择提供。 这些晶片被应用于用于制造由基本上已知的制造程序手段集成电路器件。 所形成的集成电路器件具有低的泄漏电流的设备。
-
搜索结果
2 条记录 (耗时 0.009 秒)
