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1.发明公开Driver circuit for an electromagnetic device having a coil and a movable armature 失效Treiberschaltungfüreine elektromagnetische Vorrichtung mit Spule und beweglichem Anker。
公开(公告)号：EP0041118A2
公开(公告)日：1981-12-09
申请号：EP81102743.2
申请日：1981-04-10
CPC分类号： H01F7/1816 , H01F7/123
摘要： A driver circuit for an electromagnetic device having a coil and a movable armature, e.g. a solenoid, is capable of driving the device at a fast cycling rate while dissipating little power. In response to an actuating signal applied to a transistor (22), a capacitor (23) connected to a high voltage source (24) supplies a high level current to the coil (13) of the electromagnetic device for a short time until the capacitor is charged. Thereafter, a resistor (26) connected to a low voltage source (27), supplies a low level current to the coil, thus minimizing power dissipation. In response to the cessation of the actuating signal, a transistor (28) connected across the capacitor turns on, and acts as a low impedance in parallel with the capacitor, to rapidly discharge the capacitor. Once discharged, the capacitoragain may supply high level current to the device when a fresh actuating signal is applied to the transistor (22).
摘要翻译： 一种用于具有线圈和可移动衔铁的电磁装置的驱动电路。 螺线管，能够以很快的循环速率驱动设备，同时消散很少的功率。 响应于施加到晶体管（22）的致动信号，连接到高电压源（24）的电容器（23）短时间向电磁装置的线圈（13）提供高电平电流，直到电容器 被收费。 此后，连接到低电压源（27）的电阻器（26）向线圈提供低电平电流，从而最小化功率耗散。 响应于致动信号的停止，跨过电容器连接的晶体管（28）导通，并且作为与电容器并联的低阻抗，以使电容器快速放电。 一旦放电，当新的致动信号施加到晶体管（22）时，电容器可再次向器件供应高电平电流。
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3.发明公开Driver circuit for an electromagnetic device having a coil and a movable armature 失效具有线圈和可移动臂的电磁装置的驱动电路
公开(公告)号：EP0041118A3
公开(公告)日：1982-03-31
申请号：EP81102743
申请日：1981-04-10
CPC分类号： H01F7/1816 , H01F7/123
摘要： A driver circuit for an electromagnetic device having a coil and a movable armature, e.g. a solenoid, is capable of driving the device at a fast cycling rate while dissipating little power. In response to an actuating signal applied to a transistor (22), a capacitor (23) connected to a high voltage source (24) supplies a high level current to the coil (13) of the electromagnetic device for a short time until the capacitor is charged. Thereafter, a resistor (26) connected to a low voltage source (27), supplies a low level current to the coil, thus minimizing power dissipation. In response to the cessation of the actuating signal, a transistor (28) connected across the capacitor turns on, and acts as a low impedance in parallel with the capacitor, to rapidly discharge the capacitor. Once discharged, the capacitoragain may supply high level current to the device when a fresh actuating signal is applied to the transistor (22).
摘要翻译： 一种用于具有线圈和可移动衔铁的电磁装置的驱动电路。 螺线管，能够以很快的循环速率驱动设备，同时消散很少的功率。 响应于施加到晶体管（22）的致动信号，连接到高电压源（24）的电容器（23）短时间向电磁装置的线圈（13）提供高电平电流，直到电容器 被收费。 此后，连接到低电压源（27）的电阻器（26）向线圈提供低电平电流，从而最小化功率耗散。 响应于致动信号的停止，跨过电容器连接的晶体管（28）导通，并且作为与电容器并联的低阻抗，以使电容器快速放电。 一旦放电，当新的致动信号施加到晶体管（22）时，电容器可再次向器件供应高电平电流。
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4.发明公开Low-power organic light emitting diode pixel circuit 审中-公开Organische Leuchtdioden-Pixel-Schaltung mit geringer Stromaufnahme
公开(公告)号：EP1732058A2
公开(公告)日：2006-12-13
申请号：EP06019722.5
申请日：2001-12-21
IPC分类号： G09G3/32
CPC分类号： G09G3/3233 , G09G3/006 , G09G3/2014 , G09G3/3291 , G09G2300/0809 , G09G2300/0857 , G09G2300/0861 , G09G2310/0254 , G09G2310/0256 , G09G2310/063 , G09G2320/0233 , G09G2320/043 , G09G2320/046 , G09G2320/0626 , G09G2320/0633 , G09G2320/064 , G09G2330/021 , G09G2330/022 , G09G2330/04 , G11C11/419 , H01L27/32
摘要： A pixel circuit comprises an organic light emitting diode (OLED), and a static memory for storing data that represents an operational state of the OLED. In alternative embodiments, a pixel circuit may include a complimentary metal oxide semiconductor (CMOS) circuit for controlling the OLED, a protection circuit for protecting the CMOS circuit from an over-voltage condition, and a current source with a field effect transistor (FET) having a static gate to source voltage that is greater than a threshold voltage of the FET.
摘要翻译： 像素电路包括有机发光二极管（OLED）和用于存储表示OLED的操作状态的数据的静态存储器。 在替代实施例中，像素电路可以包括用于控制OLED的互补金属氧化物半导体（CMOS）电路，用于保护CMOS电路免受过电压状况的保护电路以及具有场效应晶体管（FET）的电流源， 具有大于FET的阈值电压的静态栅极至源极电压。
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公开(公告)号：EP0097248A3
公开(公告)日：1984-12-05
申请号：EP83104959
申请日：1983-05-19
IPC分类号： G05F03/20
CPC分类号： G05F3/22
摘要： Three-transistor, four-terminal precision current source is switchable. Current is passed between two of the terminals in the presence of a switching signal on another terminal. While switched on, the current is regulated according to a reference voltage supplied to the remaining terminal. The drawing shows four similar, parallel circuits supplying current from a source +V to a light emitting diode 17. Each circuit comprises an output transistor 10 which draws current through resistor 16. The current carrying capacity of transistor 10 is controlled by two emitter coupled, complementary transistors 11, 12. The signal V(REF) supplied to transistor 11 determines the conductivity of that transistor and the signal supplied to transistor 12 renders that transistor OFF or ON and operating in the saturation region. The base current to transistor 10 is therefore controlled to be ON or OFF via transistor 12 and its magnitude when ON is controlled via transistor 11.
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公开(公告)号：EP0097248A2
公开(公告)日：1984-01-04
申请号：EP83104959.8
申请日：1983-05-19
IPC分类号： G05F3/20
CPC分类号： G05F3/22
摘要： Three-transistor, four-terminal precision current source is switchable. Current is passed between two of the terminals in the presence of a switching signal on another terminal. While switched on, the current is regulated according to a reference voltage supplied to the remaining terminal.
The drawing shows four similar, parallel circuits supplying current from a source +V to a light emitting diode 17. Each circuit comprises an output transistor 10 which draws current through resistor 16. The current carrying capacity of transistor 10 is controlled by two emitter coupled, complementary transistors 11, 12. The signal V(REF) supplied to transistor 11 determines the conductivity of that transistor and the signal supplied to transistor 12 renders that transistor OFF or ON and operating in the saturation region. The base current to transistor 10 is therefore controlled to be ON or OFF via transistor 12 and its magnitude when ON is controlled via transistor 11.
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