利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.009 秒)

    A transistor device
    1.
    发明公开
    A transistor device 失效
    晶体管器件

    公开(公告)号：EP0200422A2

    公开(公告)日：1986-12-10

    申请号：EP86302859.3

    申请日：1986-04-16

    申请人： International Business Machines Corporation

    发明人： Freeouf, John Lawrence ,  Jackson, Thomas Nelson ,  Kirchner, Peter Daniel ,  Tang, Jeffrey Yuh-Fong ,  Woodall, Jerry Macpherson

    IPC分类号： H01L29/76

    摘要： The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface be- 'tween the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

    摘要翻译： 发射极（4）的成分和掺杂分布在基极（3）中在发射极和基极之间的带偏移异质结界面附近产生电子气（16）。 当施加适当的偏压时，电子气被低阻挡层（由层10产生）限制在界面附近。 控制穿过基极到集电极（2）的弹道电子的动能以防止由静电屏障（7）引起的间隔立体散射，所述静电屏障（7）在偏压的影响下在与集电极相邻的基极部分中提供基本水平的导带。