公开(公告)号：EP0068154A2

公开(公告)日：1983-01-05

申请号：EP82104709.9

申请日：1982-05-28

申请人： International Business Machines Corporation

发明人： Isaac, Randall Duane ,  Ning, Tak Hung ,  Yang, Denny Duan-Lee

IPC分类号： H01L21/76 ,  H01L21/74 ,  H01L23/52

CPC分类号： H01L21/76237 ,  H01L21/743 ,  H01L21/76202 ,  H01L23/535 ,  H01L29/0638 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit in the form of a MOSFET device contains a refractory metallic silicide (9) beneath a field isolation region (10) and in electrical contact with electrical conductive regions (P) of active impurity dopants in a semiconductive substrate (21).
The layer of silicide (9) is fabricated by depositing refractory metal and reacting it with the substrate beneath by heat or ion implantation.

公开(公告)号：EP0068154A3

公开(公告)日：1986-05-07

申请号：EP82104709

申请日：1982-05-28

申请人： International Business Machines Corporation

发明人： Isaac, Randall Duane ,  Ning, Tak Hung ,  Yang, Denny Duan-Lee

IPC分类号： H01L21/76 ,  H01L21/74 ,  H01L23/52

CPC分类号： H01L21/76237 ,  H01L21/743 ,  H01L21/76202 ,  H01L23/535 ,  H01L29/0638 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit in the form of a MOSFET device contains a refractory metallic silicide (9) beneath a field isolation region (10) and in electrical contact with electrical conductive regions (P) of active impurity dopants in a semiconductive substrate (21). The layer of silicide (9) is fabricated by depositing refractory metal and reacting it with the substrate beneath by heat or ion implantation.

公开(公告)号：EP0068154B1

公开(公告)日：1989-03-08

申请号：EP82104709.9

申请日：1982-05-28

申请人： International Business Machines Corporation

发明人： Isaac, Randall Duane ,  Ning, Tak Hung ,  Yang, Denny Duan-Lee

IPC分类号： H01L21/76 ,  H01L21/74 ,  H01L23/52

CPC分类号： H01L21/76237 ,  H01L21/743 ,  H01L21/76202 ,  H01L23/535 ,  H01L29/0638 ,  H01L2924/0002 ,  H01L2924/00