公开(公告)号：EP1699945A1

公开(公告)日：2006-09-13

申请号：EP04818420.4

申请日：2004-11-11

申请人： International Business Machines Corporation

发明人： NARAYANAN, Vijay ,  MCFEELY, Fenton ,  MILKOVE, Keith, Raymond ,  YURKAS, John, Jacob ,  COPEL, Matthew, Warren ,  JAMISON, Paul, Charles ,  CARRUTHERS, Roy ,  CABRAL JNR, Cyril ,  SIKORSKI, Edmund ,  DUCH, Elizabeth ,  CALLEGARI, Alessandro ,  ZAFAR, Sufi ,  NAKAMURA, Kazuhito

IPC分类号： C23C16/34 ,  H01L29/772 ,  H01L29/10 ,  H01L21/336 ,  H01L21/8234

CPC分类号： C23C16/34 ,  H01L21/28088 ,  H01L21/823828 ,  H01L29/4966 ,  H01L29/78

摘要： Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO 2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta - N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta-N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.