公开(公告)号：EP2966773A4

公开(公告)日：2016-04-13

申请号：EP14761195

申请日：2014-02-28

申请人： JAPAN SCIENCE & TECH AGENCY

发明人： NODA SUSUMU ,  SHIBAHARA TATSUYA ,  DE ZOYSA MENAKA ,  ASANO TAKASHI ,  KITANO KEISUKE ,  SUZUKI KATSUYOSHI ,  INOUE TAKUYA ,  ISHIZAKI KENJI

IPC分类号： H02S10/30 ,  H01K1/04 ,  H01L31/054

CPC分类号： H02S10/30 ,  G02B1/005 ,  H01K1/04 ,  H01L31/054 ,  H01L31/055 ,  Y02E10/52

摘要： The present invention provides a thermal emission source that allows a wider range of material choices than those of conventional techniques, so that light having a desired peak wavelength can easily be obtained. A thermal emission source 10 includes a thermo-optical converter composed of an optical structure in which a refractive index distribution is formed in a member 11 made of an intrinsic semiconductor so as to resonate with light of a shorter wavelength than a wavelength corresponding to a bandgap of the intrinsic semiconductor. When heat is externally supplied to the thermo-optical converter, light having a spectrum in a band of shorter wavelengths than a cutoff wavelength is produced by interband absorption in the intrinsic semiconductor, and light of a resonant wavelength » r in the wavelength band, the light causing resonance in the optical structure, is selectively intensified and emitted as thermal emission. In the present invention, an intrinsic semiconductor that provides a wide range of material choices is used, so that a thermal emission source that produces narrow-band light having a desired peak wavelength can easily be obtained.