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    HIGH-RESISTANCE SILICON WAFER AND PROCESS FOR PRODUCING THE SAME
    3.
    发明公开
    HIGH-RESISTANCE SILICON WAFER AND PROCESS FOR PRODUCING THE SAME 有权
    与其生产高耐热性和过程的硅晶片

    公开(公告)号：EP1542269A4

    公开(公告)日：2008-03-05

    申请号：EP03741140

    申请日：2003-06-30

    申请人： SUMCO CORP

    发明人： SADAMITSU SHINSUKE ,  TAKASE NOBUMITSU ,  TAKAO HIROYUKI ,  SUEOKA KOUJI ,  HORAI MASATAKA

    IPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/322 ,  H01L21/762 ,  H01L27/12

    CPC分类号： C30B33/00 ,  C30B29/06 ,  H01L21/3225 ,  H01L21/76243 ,  Y10T428/21

    摘要： A high-resistance silicon wafer that is excellent in gettering performance and economical efficiency and enables effectively inhibiting the occurrence of oxygen donors at the circuit-forming heat treatment conducted on the side of device maker is produced by subjecting a carbon-doped high resistance/high oxygen silicon wafer of 100 ohmcm or greater resistivity and 5 x 10 to 5 x 10 atoms/cm carbon concentration to heat treatment at high temperature such as 1100ºC or higher so that the concentration of residual oxygen becomes 6.5 x 10 atoms/cm or greater according to Old ASTM. In place of this heat treatment at high temperature, use can be made of, for example, OD treatment for forming a DZ layer on a wafer surface layer portion, high-temperature annealing for removing surface layer COP, high-temperature heat treatment for forming a BOX layer in a process for production of SIMOX wafer, etc..

    METHOD OF GROWING SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING SILICON WAFER
    4.
    发明公开
    METHOD OF GROWING SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING SILICON WAFER 有权
    方法和硅单晶提拉VERFARHEN用于制造硅晶片

    公开(公告)号：EP1895027A4

    公开(公告)日：2009-06-24

    申请号：EP05806144

    申请日：2005-11-08

    申请人： SUMCO CORP

    发明人： KOGURE YASUHIRO ,  TAKASE NOBUMITSU ,  INAMI SHUICHI ,  NAKAMURA TSUYOSHI ,  HAMADA KEN

    IPC分类号： C30B29/06 ,  C30B15/20

    CPC分类号： C30B15/20 ,  C30B15/203 ,  C30B29/06

    摘要： A method of growing a silicon single crystal by which a silicon single crystal having an oxygen concentration of 12×10 17 -18×10 17 atoms/cm 3 as determined through a measurement in accordance with ASTM-F121 1979 is grown by the Czochralski method. The atmospheric gas in which the single crystal is grown is a mixed gas comprising an inert gas and the gas of a hydrogen-atom-containing substance. The temperature of the silicon single crystal being grown is controlled so that the ratio of the axial-direction temperature gradient in the crystal core Gc in the range of from the melting point to 1,350°C to the axial-direction temperature gradient in a crystal periphery part Ge in the range of from the melting point to 1,350°C, Gc/Ge, is 1.1-1.4 and that the axial-direction temperature gradient in the crystal core Gc is 3.0-3.5 °C/mm.

    HIGH RESISTANCE SILICON WAFER AND METHOD FOR PRODUCTION THEREOF
    7.
    发明公开
    HIGH RESISTANCE SILICON WAFER AND METHOD FOR PRODUCTION THEREOF 有权
    具有产生高耐热性和过程的硅晶片

    公开(公告)号：EP1501122A4

    公开(公告)日：2008-12-10

    申请号：EP03720915

    申请日：2003-04-16

    申请人： SUMCO CORP

    发明人： TAKASE NOBUMITSU ,  NISHIKAWA HIDESHI ,  ITO MAKOTO ,  SUEOKA KOUJI ,  SADAMITSU SHINSUKE

    IPC分类号： H01L21/26 ,  H01L21/322

    CPC分类号： H01L21/3225

    摘要： A high resistance silicon wafer which has a resistivity of 100 ohm or more, contains oxygen precipitates (BMD) having a size of 0.2 mum or more formed in the inside thereof in a high density of 1 x 10 pieces/cm or more, and has an oxygen concentration of 12 x10 atoms/cm or less (ASTM F-121, 1979) and a carbon concentration of 0.5 x10 atoms/cm or more; and a method for producing the silicon wafer which comprises subjecting a high resistance, high oxygen concentration silicon wafer doped with carbon having the above resistivity, an oxygen concentration of 14 x10 atoms/cm or more (ASTM F-121, 1979) and the above carbon concentration, in a non-oxidizing gas atmosphere, to an oxygen precipitation nucleus forming heat treatment at 500 to 900°C for five hours or more and further to an oxygen precipitate growing heat treatment at 950 to 1050°C for ten hours or more, to thereby reduce the oxygen concentration in the wafer to the above level. The high resistance silicon wafer is excellent in gettering capability, mechanical strength and economy, and further can effectively suppress the generation of oxygen thermal donors in a heat treatment for forming a circuit carried out on the device maker side.