公开(公告)号：EP4328953A3

公开(公告)日：2024-06-12

申请号：EP24151810.9

申请日：2018-01-22

申请人： JX Metals Corporation

发明人： ODA, Kunihiro ,  ASANO, Takayuki

IPC分类号： C23C14/34 ,  C04B35/58 ,  C23C14/06 ,  C01B33/06 ,  C04B35/645 ,  H01J37/34 ,  C04B35/626

CPC分类号： C23C14/0682 ,  C04B35/58092 ,  C04B2235/72320130101 ,  C04B2235/7920130101 ,  C04B2235/78620130101 ,  C04B2235/389120130101 ,  C04B2235/389520130101 ,  C04B2235/543620130101 ,  C04B2235/42820130101 ,  C01B33/06 ,  C04B35/645 ,  C04B2235/658120130101 ,  C04B35/6261 ,  C04B2235/7220130101 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3491

摘要： A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 µm or more per 80000 mm2 on the sputtering surface.

公开(公告)号：EP4328953A2

公开(公告)日：2024-02-28

申请号：EP24151810.9

申请日：2018-01-22

申请人： JX Metals Corporation

发明人： ODA, Kunihiro ,  ASANO, Takayuki

IPC分类号： H01J37/34

摘要： A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 µm or more per 80000 mm 2 on the sputtering surface.