公开(公告)号：EP0239304A3

公开(公告)日：1987-12-16

申请号：EP87302281

申请日：1987-03-17

申请人： Kennecott Corporation

发明人： Kim, Jonathan J. ,  Katz, Joel D.

IPC分类号： C04B35/56 ,  C04B35/64

CPC分类号： F27B5/10 ,  C04B35/565 ,  C04B35/64 ,  F27B17/00 ,  F27B17/0016 ,  F27D3/12 ,  F27D5/005 ,  F27D99/0001

摘要： A system to prevent, retard or reverse the decomposition of silicon carbide articles during high temperature plasma sintering. Preferably, the system comprises sintering a silicon carbide refractory or ceramic green body in a closed sintering environment, such as a closed tube, with strategic placement of the plasma torch or torches, exhaust outlet and tube. As sintering proceeds, a silicon vapour pressure builds up within the tube, retarding the decomposition of the silicon carbide body. The plasma torch, exhaust outlet, and tubes are positioned so that buoyant convective flow is maximised to increase the heat transfer and energy efficiency. In another embodiment, a "sacrificial" source of silicon carbide is placed into the sintering furnace. The silicon carbide in the sacrificial source starts to decompose before the silicon carbide refractory or ceramic article, creating a supersaturated atmosphere of silicon vapour species in the furnace. This prevents, retards or reverses the silicon carbide decomposition reactions and thus maintains the integrity of the refractory or ceramic article being sintered. Preferably, the sacrificial source is placed in a closed sintering environment along with the silicon carbide articles being sintered.