公开(公告)号：EP2959504A1

公开(公告)日：2015-12-30

申请号：EP14754941.4

申请日：2014-02-25

申请人： Kla-Tencor Corporation ,  Sandia Corporation

发明人： DELGADO, Gildardo ,  JOHNSON, Terry ,  ARIENTI, Marco ,  HARB, Salam ,  KLEBANOFF, Lennie ,  GARCIA, Rudy ,  TAHMASSEBPUR, Mohammed ,  SCOTT, Sarah

IPC分类号： H01L21/66

CPC分类号： G01N21/15 ,  G01N21/9501 ,  G01N2021/151 ,  G03F7/705 ,  G03F7/70933

摘要： A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.

公开(公告)号：EP2959504B1

公开(公告)日：2018-07-04

申请号：EP14754941.4

申请日：2014-02-25

申请人： Kla-Tencor Corporation ,  Sandia Corporation

发明人： DELGADO, Gildardo ,  JOHNSON, Terry ,  ARIENTI, Marco ,  HARB, Salam ,  KLEBANOFF, Lennie ,  GARCIA, Rudy ,  TAHMASSEBPUR, Mohammed ,  SCOTT, Sarah

IPC分类号： G03F7/20

CPC分类号： G01N21/15 ,  G01N21/9501 ,  G01N2021/151 ,  G03F7/705 ,  G03F7/70933

摘要： A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.