公开(公告)号：EP2196991A1

公开(公告)日：2010-06-16

申请号：EP09172288.4

申请日：2009-10-06

申请人： Korea Advanced Institute of Science and Technology

发明人： Shin, Sung Chul ,  Jung, Hee-Tae ,  Ko, Hyun-Seok ,  Jung, Jin-Mi

IPC分类号： G11B5/855 ,  H01F1/06

CPC分类号： G11B5/855 ,  B82Y25/00 ,  H01F1/009 ,  H01F1/065 ,  H01F1/068 ,  H01F41/18 ,  Y10T428/24612

摘要： This invention relates to a L1 0 -ordered FePt nanodot array which is manufactured using capillary force lithography, to a method of manufacturing the L1 0 -ordered FePt nanodot array and to a high density magnetic recording medium using the L1 0 -ordered FePt nanodot array. This method includes depositing a FePt thin film on a MgO substrate, forming a thin film made of a polymer material on the deposited FePt thin film using spin coating, bringing a mold into contact with the spin coated FePt thin film, annealing the mold and a polymer pattern which are in contact with each other, cooling and separating the mold and the polymer pattern which are annealed, controlling a size of the polymer pattern through reactive ion etching, ion milling a portion of the FePt thin film uncovered with the polymer pattern thus forming a FePt nanodot array and then removing a remaining polymer layer, and annealing the FePt nanodot array.

摘要翻译： 本发明涉及使用毛细管力平版印刷法制造的L1-0级FePt纳米点阵列，涉及一种制造L1-0级FePt纳米点阵列的方法，以及使用L10级FePt纳米点阵列的高密度磁记录介质 。 该方法包括在MgO基板上沉积FePt薄膜，使用旋涂在沉积的FePt薄膜上形成由聚合物材料制成的薄膜，使模具与旋涂FePt薄膜接触，退火模具和 聚合物图案彼此接触，冷却和分离退火的模具和聚合物图案，通过反应离子蚀刻控制聚合物图案的尺寸，离子研磨由聚合物图案未覆盖的一部分FePt薄膜，因此 形成FePt纳米点阵列，然后除去剩余的聚合物层，并退火FePt纳米点阵列。