公开(公告)号：EP1376155A1

公开(公告)日：2004-01-02

申请号：EP02710490.0

申请日：2002-02-04

申请人： Kyoto Semiconductor Corporation ,  Center for Advanced Science and Technology Incubation, Ltd.

发明人： NAKATA, Josuke ,  TOMOZAWA, Hidemasa, c/o Kyoto Semiconductor Corp. ,  TAKAMASA, Tomoji ,  OKAMOTO, Koji

IPC分类号： G01T1/24

CPC分类号： G01T1/26

摘要： The invention relates to a radiation detector. The detector includes an insulating substrate, a thin-film layer made of semiconductor or insulator formed on the surface of the substrate, at least a pair of electrodes provided on the thin-film layer, voltage applying means for applying a voltage across the electrodes and current detection means for detecting current taken from the electrodes, wherein radiation is detected using the fact that conductance of the thin-film layer changes linearly with respect to radiation intensity due to irradiation with radiation. Preferably, the thin-film layer comprises a metallic oxide. The metallic oxide comprises either one or any combination of two or more selected from titanium oxide, aluminum oxide (alumina), zirconium oxide, iron oxide, zinc oxide, yttrium oxide, manganese oxide, neodymium oxide, ceric oxide, tin oxide, or strontium titanate.

摘要翻译： 本发明涉及一种辐射检测器。 该检测器包括绝缘基板，形成在基板表面上的由半导体或绝缘体制成的薄膜层，设置在薄膜层上的至少一对电极，用于施加跨越电极的电压的电压施加装置，以及 用于检测从电极获取的电流的电流检测装置，其中使用由于辐射照射而相对于辐射强度线性改变的薄膜层的电导来检测辐射。 优选地，薄膜层包含金属氧化物。 金属氧化物包括选自氧化钛，氧化铝（氧化铝），氧化锆，氧化铁，氧化锌，氧化钇，氧化锰，氧化钕，氧化铈，氧化锡或锶中的一种或两种以上的组合 钛酸。