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公开(公告)号：EP4131677A1
公开(公告)日：2023-02-08
申请号：EP21781958.0
申请日：2021-03-17
摘要： A two-dimensional photonic-crystal laser 10 includes: a substrate 11 made of an n-type semiconductor; a p-type cladding layer (p-type semiconductor layer) 131 provided on an upper side of the substrate 11 and made of a p-type semiconductor; an active layer 14 provided on an upper side of the p-type cladding layer 131; a two-dimensional photonic-crystal layer 16 provided on an upper side of the active layer 14 and including a plate-shaped base body 161 made of an n-type semiconductor in which modified refractive index areas 162 whose refractive index differs from the base body 161 are periodically arranged; a first tunnel layer 121 provided between the substrate 11 and the p-type cladding layer 131 and made of an n-type semiconductor having a carrier density higher than a carrier density of the substrate 11; a second tunnel layer 122 provided in contact with the first tunnel layer 121 between the first tunnel layer 121 and the p-type cladding layer 131, and made of a p-type semiconductor having a carrier density higher than a carrier density of the p-type semiconductor layer; a first electrode 181 provided on a lower side of the substrate 11 or in the substrate 11; and a second electrode 182 provided on an upper side of the two-dimensional photonic-crystal layer 16.
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公开(公告)号：EP4300731A1
公开(公告)日：2024-01-03
申请号：EP22759758.0
申请日：2022-02-24
申请人： Kyoto University
发明人： NODA, Susumu , DE ZOYSA, Menaka , SAKATA, Ryoichi , ISHIZAKI, Kenji , INOUE, Takuya , YOSHIDA, Masahiro
摘要： A two-dimensional photonic crystal laser includes: a pair of electrodes (a first electrode 171 and a second electrode 172); an active layer (11) provided between the pair of electrodes and configured to generate light of a predetermined wavelength upon being supplied with an electric current from the electrodes; and a two-dimensional photonic crystal layer (12) provided between any one of the pair of electrodes and the active layer (11) and including a plate-shaped base member (121) and a plurality of modified refractive index regions (122) disposed in the base member (121) and having a refractive index different from that of the base member (121), in which the plurality of modified refractive index regions (122) are disposed to be shifted by different shift amounts from respective lattice points of a two-dimensional lattice which are periodically disposed in the base member with a period corresponding to the predetermined wavelength, or/and are disposed at the respective lattice points with different areas, the shift amount or/and the area of each of the plurality of modified refractive index regions (122) is/are modified with a composite modulation period in which a plurality of periods different from each other are superposed on each other, and is/are expressed by a modulation phase Ψ(r↑) expressed using a vector r↑ indicating a position of each of the lattice points of the two-dimensional lattice, a vector k n ↑ indicating a combination of an inclination angle and an azimuthal angle of each of n (n is an integer of 2 or more) laser beams differing in the inclination angle and/or the azimuthal angle from each other, and an amplitude A n and a phase exp(iα n ) determined for each n as Ψ r ↑ = arg ∬ ∑ n A n exp i α n δ k ↑ − k n ↑ exp i k ↑ ⋅ r ↑ d k ↑ and
the amplitude A n and/or the phase exp(iα n ) for each value of n differ(s) from each other in at least two different values of n.-
公开(公告)号：EP4131675A1
公开(公告)日：2023-02-08
申请号：EP21781520.8
申请日：2021-03-30
申请人： Kyoto University
IPC分类号： H01S5/18
摘要： Provided is a two-dimensional photonic-crystal laser capable of scanning with a laser beam and emitting the laser beam without the laser beam being attenuated by an electrode. A two-dimensional photonic-crystal laser 1 formed by sandwiching, between a first electrode 181 and a second electrode 182, a layered body 10 including an active layer 13 and a two-dimensional photonic-crystal layer 15 in which modified refractive index areas 152 having a refractive index different from a refractive index of a plate-shaped base body 151 are periodically arranged two-dimensionally on the base body 151. The first electrode 181 is divided into a plurality of partial electrodes 1811, and the second electrode 182 is a frame-shaped electrode including a frame-shaped portion 1821 made of a conductor, the second electrode 182 having a window portion 1822 which is a space inside the frame-shaped portion 1821 being arranged to face a region enclosing a plurality of the partial electrodes 1811. A lens 19 provided on the side opposite to the layered body 10 of the second electrode 182 in a manner covering the entire window portion 1822 is included.
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公开(公告)号：EP4311043A1
公开(公告)日：2024-01-24
申请号：EP22771148.8
申请日：2022-03-04
发明人： FUJIWARA, Naoki , KONO, Naoya , FURUYA, Akira , ITO, Yuki , NODA, Susumu , INOUE, Takuya , ISHIZAKI, Kenji
摘要： A photonic crystal surface-emitting laser includes a light emitting region from which light is emitted in a direction crossing an in-plane direction, and a current blocking region that is adjacent to the light emitting region in the in-plane direction and in which current is less likely to flow than in the light emitting region. The light emitting region and the current blocking region each include a photonic crystal layer. The photonic crystal layer has a first region and second regions periodically arranged in the in-plane direction in the first region. A refractive index of each of the second regions is different from a refractive index of the first region. The light emitting region includes a first semiconductor layer having a first conductivity type, an active layer having an optical gain, and a second semiconductor layer having a second conductivity type. The first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on top of one another in an emission direction of the light.
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公开(公告)号：EP4300732A1
公开(公告)日：2024-01-03
申请号：EP22759757.2
申请日：2022-02-24
申请人： Kyoto University
IPC分类号： H01S5/18
摘要： A two-dimensional photonic-crystal surface-emitting laser (10) includes: a two-dimensional photonic-crystal layer (12) in which modified refractive index regions (122) having a refractive index different from a refractive index of a plate-like base material (121) are periodically disposed in the base material (121); an active layer (11) provided on one surface side of the two-dimensional photonic-crystal layer (12); and a reflection layer (15) provided on the other surface side of the two-dimensional photonic-crystal layer (12) or on a side opposite to the two-dimensional photonic-crystal layer (12) of the active layer (11) so as to be spaced apart from the two-dimensional photonic-crystal layer (12), wherein a distance d between surfaces of the two-dimensional photonic-crystal layer (12) and the reflection layer (15) facing each other is set such that a radiation coefficient difference Δα v = (α v1 - α v0 ), which is a value obtained by subtracting a radiation coefficient α v0 of a fundamental mode having the smallest loss from a radiation coefficient α v1 of a first higher order mode having the second smallest loss among the light amplified in the two-dimensional photonic-crystal layer (12), is 1 cm -1 or more.
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公开(公告)号：EP4266516A1
公开(公告)日：2023-10-25
申请号：EP21906170.2
申请日：2021-10-29
发明人： KONO, Naoya , ITO, Yuki , FUJIWARA, Naoki , NODA, Susumu , INOUE, Takuya , DE ZOYSA, Menaka , ISHIZAKI, Kenji
摘要： A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.
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