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公开(公告)号:EP3985751A1
公开(公告)日:2022-04-20
申请号:EP20822015.2
申请日:2020-06-10
申请人: Kyungpook National University Industry-Academic Cooperation Foundation , Seoul National University R&DB Foundation
发明人: HEO, Young Woo , KIM, Hyeok , LEE, Joon Hyung , KIM, Jeong Joo , LEE, Sang Wook , HAN, Jeong Woo , KIM, Sang Hyub , LEE, Chang Hee
摘要: A quantum dot light emitting diode according to various embodiments of the present disclosure includes a first electrode and a second electrode that are opposite to each other; a light emitting layer that is located between the first electrode and the second electrode and includes a quantum dot; and an electron transport layer that is arranged between the first electrode and the light emitting layer and includes a metal oxide thin film, wherein the metal oxide thin film has a composition including at least one selected from the group consisting of In 2 O 3 , ZnO, SiO 2 and SnO 2 .