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公开(公告)号:EP3049499B1
公开(公告)日:2020-07-22
申请号:EP14849790.2
申请日:2014-09-19
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公开(公告)号:EP3049499A1
公开(公告)日:2016-08-03
申请号:EP14849790.2
申请日:2014-09-19
发明人: Sanchez,Antonio , Girard,Jean Marc , KHANDELWAL, Manish , STEPHENS, Matthew Damien , ITOV, Genaadiy , ZHANG, Peng
IPC分类号: C09K3/18
摘要: Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.
摘要翻译: 描述了无卤素胺取代的三甲硅烷基胺和三甲硅烷基胺化合物及其通过相应的未取代的甲硅烷基胺与过渡金属催化剂催化的胺之间的脱氢偶合制备它们的方法。 该新方法基于Si-H和N-H取代基的催化脱氢偶联形成含Si-N的化合物和氢气。 该过程可以通过过渡金属非均相催化剂如碳上的Ru(0),MgO上的Pd(0))以及作为均相催化剂的过渡金属有机金属络合物催化。 含-Si-N的产品不含卤化物。 此类化合物可用于通过化学气相沉积或含Si膜的原子层沉积来沉积薄膜。
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