Solar cell and method for manufacturing the same
    3.
    发明公开
    Solar cell and method for manufacturing the same 有权
    太阳能电池及其制造方法

    公开(公告)号:EP2595194A3

    公开(公告)日:2013-07-24

    申请号:EP12005631.2

    申请日:2012-08-02

    IPC分类号: H01L31/0224 H01L31/0236

    摘要: A solar cell includes a substrate formed of n-type single crystal silicon, an emitter region of a p-type which is positioned at a first surface of the substrate and includes a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, a plurality of surface field regions of the n-type locally positioned at a second surface opposite the first surface of the substrate, a plurality of first electrodes which are positioned only on the second emitter region to be separated from one another and are connected to the second emitter region, and a plurality of second electrodes which are positioned on the plurality of surface field regions to be separated from one another and are connected to the plurality of surface field regions.

    摘要翻译: 一种太阳能电池,包括由n型单晶硅形成的衬底,位于衬底的第一表面处并包括具有第一薄层电阻的第一发射极区域和具有第二发射极区域的第二发射极区域的p型发射极区域, 小于第一薄层电阻的第二薄层电阻,局部位于与衬底的第一表面相对的第二表面处的n型表面场区,多个第一电极,其仅定位在第二发射极区上 彼此分开并连接到第二发射极区域;以及多个第二电极,位于多个表面场区域上以彼此分离并连接到多个表面场区域。

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明公开
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:EP2980858A2

    公开(公告)日:2016-02-03

    申请号:EP15002213.5

    申请日:2015-07-27

    摘要: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate.

    摘要翻译: 公开了一种太阳能电池及其制造方法。 所述太阳能电池包括掺杂有第一导电类型的杂质的半导体衬底,设置在所述衬底的前表面并且以比所述衬底的浓度高的浓度掺杂有所述第一导电类型的杂质的前表面场区, 层,设置在衬底的背表面上并且由电介质材料形成;发射极区域,设置在隧道层的背表面的第一部分处并且掺杂有与第一导电类型相反的第二导电类型的杂质;背面 表面场区,其设置在隧道层的后表面的第二部分处并且以比基板的浓度高的浓度掺杂第一导电类型的杂质。

    SOLAR CELL
    6.
    发明公开
    SOLAR CELL 有权
    SOLARZELLE

    公开(公告)号:EP3070750A1

    公开(公告)日:2016-09-21

    申请号:EP16160828.6

    申请日:2016-03-17

    IPC分类号: H01L31/074 H01L31/0216

    摘要: Disclosed is a solar cell including a semiconductor substrate, a first conductive area disposed on one surface of the semiconductor substrate, the first conductive area being of a first conductive type, a second conductive area of a second conductive type opposite to the first conductive type, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. At least one of the first conductive area and the second conductive area is formed of a metal compound layer.

    摘要翻译: 公开了一种太阳能电池,包括半导体衬底,设置在半导体衬底的一个表面上的第一导电区域,第一导电区域是第一导电类型,第二导电类型与第一导电类型相反的第二导电区域, 连接到第一导电区域的第一电极和连接到第二导电区域的第二电极。 第一导电区域和第二导电区域中的至少一个由金属化合物层形成。

    Solar cell and method for manufacturing the same

    公开(公告)号:EP2538447B1

    公开(公告)日:2015-04-22

    申请号:EP12004604.0

    申请日:2012-06-19

    IPC分类号: H01L31/0216 H01L31/18

    摘要: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate (110) of a first conductive type, an emitter region (120) of a second conductive type opposite the first conductive type, the emitter region forming a p-n junction along with the substrate, a passivation layer (190) which is positioned on a back surface of the substrate and has a plurality of via holes exposing portions of the back surface of the substrate, a first electrode (150) connected to the emitter region (120), and a second electrode (160) which is positioned on a back surface of the passivation layer and is connected to the substrate through the plurality of via holes. The passivation layer (190) includes a first passivation layer formed of amorphous silicon (191) and a second passivation layer formed of amorphous silicon nitride (192). It may further include a third passivation layer formed of silicon oxide and positioned between the back surface of the substrate (110) and the first passivation layer (191).