公开(公告)号：EP2426705A1

公开(公告)日：2012-03-07

申请号：EP10769527.2

申请日：2010-04-30

申请人： Lion Corporation

发明人： HIDAKA, Makoto ,  OGURA, Taku ,  KIKUCHI, Maiko ,  KAGEYAMA, Motohiro ,  TAKASHIMA, Masayuki

IPC分类号： H01L21/304

CPC分类号： C11D3/046 ,  C11D3/2075 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/10 ,  C11D7/265 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02052

摘要： Disclosed is a cleaning method which can remove, particularly, all of an organic contaminant, a particle contaminant, and a metal contaminant adhered to a semiconductor substrate at a high cleaning level, and which can realize the reduction in environmental load caused by the cleaning. The method of cleaning the semiconductor substrate includes a first cleaning process of cleaning the semiconductor substrate with a cleaning composition including a transition-metal-containing water-soluble salt (A), a chelating agent (B1), and a peroxide (C), a ratio of the chelating agent (B1) to the transition-metal-containing water-soluble salt (A) being 0.5 molar equivalent or more; and a second cleaning process of cleaning the semiconductor substrate, which is cleaned through the first cleaning process, with an acidic solution containing a chelating agent (B2).

摘要翻译： 公开了一种能够以高清洁水平去除特别是全部附着到半导体衬底的有机污染物，颗粒污染物和金属污染物并且可以实现由清洁引起的环境负荷降低的清洁方法。 清洗半导体衬底的方法包括用包含含过渡金属的水溶性盐（A），螯合剂（B1）和过氧化物（C）的清洁组合物清洗半导体衬底的第一清洁工艺， 螯合剂（B1）与含过渡金属的水溶性盐（A）的比例为0.5摩尔当量以上; 以及通过第一清洁处理清洁半导体衬底的第二清洁工艺，其中含有螯合剂（B2）的酸性溶液。