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公开(公告)号:EP3403303A1
公开(公告)日:2018-11-21
申请号:EP17753975.6
申请日:2017-02-17
发明人: HEMENWAY, Roe , STAGARESCU, Cristian , MEEROVICH, Daniel , GREEN, Malcolm, R. , PARZ, Wolfgang , MA, Jichi , GRZYBOWSKI, Richard Robert , BICKEL, Nathan
摘要: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.
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公开(公告)号:EP3691060A1
公开(公告)日:2020-08-05
申请号:EP20163531.5
申请日:2017-02-17
发明人: HEMENWAY, Roe , STAGARESCU, Cristian , MEEROVICH, Daniel , GREEN, Malcolm, R. , PARZ, Wolfgang , MA, Jichi , GRZYBOWSKI, Richard Robert , BICKEL, Nathan
摘要: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.
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公开(公告)号:EP3403303B1
公开(公告)日:2020-04-22
申请号:EP17753975.6
申请日:2017-02-17
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公开(公告)号:EP3447556A3
公开(公告)日:2019-03-27
申请号:EP18194958.7
申请日:2017-02-17
发明人: HEMENWAY, Roe , STAGARESCU, Cristian , MEEROVICH, Daniel , GREEN, Malcolm, R. , PARZ, Wolfgang , MA, Jichi , GRZYBOWSKI, Richard Robert , BICKEL, Nathan
摘要: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.
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