公开(公告)号：EP0521219A2

公开(公告)日：1993-01-07

申请号：EP91311763.6

申请日：1991-12-18

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Kanda, Akihiro ,  Tanaka, Mitsuo ,  Hirai, Takehiro ,  Nakatani, Masahiro

IPC分类号： H01L27/082 ,  H01L21/74 ,  H01L29/73

CPC分类号： H01L21/82285 ,  H01L21/743 ,  H01L21/8226 ,  H01L27/0826 ,  Y10S148/087

摘要： The present invention provides a semiconductor device, in particular, a semiconductor device comprising a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same one-conductivity type semiconductor substrate (1). The IIL comprises an emitter, a base and a collector which are respectively comprised of a high-density n⁺-type first buried layer (5), a p⁺-type second buried layer (8) having a lower impurity density than the n⁺-type first buried layer (5), and at least one of n⁺-type diffused layer (31).
The semiconductor device thus constituted makes it possible to increase the emitter injection efficiency while the base impurity density is kept high, and also to decrease the base width, so that the collector-emitter breakdown voltage and current gain of the IIL can be more improved and also the operation speed of the IIL can be made higher.

摘要翻译： 本发明提供一种半导体器件，特别是包括集成在同一导电型半导体衬底（1）上的垂直npn晶体管，垂直pnp晶体管和IIL的半导体器件。 IIL包括发射极，基极和集电极，它们分别由具有较低杂质密度的高密度n +型第一掩埋层（5），ap +型第二掩埋层（8）构成 比n +型第一掩埋层（5）以及n +型扩散层（31）中的至少一个更好。 这样构成的半导体装置能够提高发射极注入效率，同时基极杂质浓度保持较高，并且还可以降低基极宽度，从而可以进一步提高IIL的集电极 - 发射极击穿电压和电流增益， 也可以使IIL的运行速度更高。

公开(公告)号：EP0521219B1

公开(公告)日：1998-02-25

申请号：EP91311763.6

申请日：1991-12-18

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Kanda, Akihiro ,  Tanaka, Mitsuo ,  Hirai, Takehiro ,  Nakatani, Masahiro

IPC分类号： H01L27/082 ,  H01L21/74 ,  H01L29/73

CPC分类号： H01L21/82285 ,  H01L21/743 ,  H01L21/8226 ,  H01L27/0826 ,  Y10S148/087

公开(公告)号：EP0521219A3

公开(公告)日：1994-08-31

申请号：EP91311763.6

申请日：1991-12-18

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Kanda, Akihiro ,  Tanaka, Mitsuo ,  Hirai, Takehiro ,  Nakatani, Masahiro

IPC分类号： H01L27/082 ,  H01L21/74 ,  H01L29/73

CPC分类号： H01L21/82285 ,  H01L21/743 ,  H01L21/8226 ,  H01L27/0826 ,  Y10S148/087

摘要： The present invention provides a semiconductor device, in particular, a semiconductor device comprising a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same one-conductivity type semiconductor substrate (1). The IIL comprises an emitter, a base and a collector which are respectively comprised of a high-density n⁺-type first buried layer (5), a p⁺-type second buried layer (8) having a lower impurity density than the n⁺-type first buried layer (5), and at least one of n⁺-type diffused layer (31). The semiconductor device thus constituted makes it possible to increase the emitter injection efficiency while the base impurity density is kept high, and also to decrease the base width, so that the collector-emitter breakdown voltage and current gain of the IIL can be more improved and also the operation speed of the IIL can be made higher.

摘要翻译： 本发明提供了一种半导体器件，特别是包括集成在同一导电类型半导体衬底（1）上的垂直npn晶体管，垂直pnp晶体管和IIL的半导体器件。 IIL包括一个发射极，一个基极和一个集电极，它们分别由高密度n +型第一埋层（5），杂质密度比n +型杂质密度低的p +型第二埋层（8） 型第一埋层（5）和至少一个n +型扩散层（31）。 这样构成的半导体器件可以在保持基本杂质密度高的同时提高发射极注入效率，并且还可以降低基极宽度，从而可以进一步改善IIL的集电极 - 发射极击穿电压和电流增益并且 也可以使IIL的操作速度更高。