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    LIQUID DOPING SYSTEMS AND METHODS FOR CONTROLLED DOPING OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL
    2.
    发明授权
    LIQUID DOPING SYSTEMS AND METHODS FOR CONTROLLED DOPING OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL 有权
    FLÜSSIGDOTIERSYSTEMEAND METHOD FOR单晶半导体材料的可控分配

    公开(公告)号：EP2938759B1

    公开(公告)日：2017-03-22

    申请号：EP13817700.1

    申请日：2013-12-31

    申请人： MEMC Electronic Materials S.p.A.

    发明人： HARINGER, Stephan ,  GIANNATTASIO, Armando ,  SCALA, Roberto ,  BONANNO, Luigi ,  MOSER, Valentino

    IPC分类号： C30B15/04 ,  C30B29/06

    CPC分类号： C30B15/04 ,  C30B29/06 ,  Y10T117/1056

    摘要： A doping system for introducing liquid dopant into a melt of semiconductor or solar-grade material includes a dopant reservoir for holding dopant and a feeding tube. The dopant reservoir includes a body and a tapered end defining an opening having a smaller cross-sectional area than a cross-sectional area of the body. The feeding tube includes a first end extending from the opening of the reservoir, a second end distal from the first end, an angled tip disposed at the second end of the feeding tube, a first restriction for inhibiting the passage of solid dopant through the feeding tube, and a second restriction for controlling the flow of liquid dopant, the second restriction disposed near the second end of the feeding tube.

    摘要翻译： 用于将液体掺杂剂引入半导体或太阳能级材料的熔体的掺杂系统包括用于保持掺杂物和进料管的掺杂剂贮存器。 掺杂剂贮存器包括主体和具有比所述主体的横截面面积小的横截面面积开口的锥形端，限定。 所述进料管包括第一端部从所述储存器的开口，从所述第一端成角度尖端在所述饲管的所述第二端设置的第二端部的远端延伸;第一限制为抑制通过馈送固体掺杂剂的通道 管，以及用于控制液体掺杂剂的流动的第二限制时，第二限制设置在靠近进料管的第二端。