公开(公告)号：EP1063685A4

公开(公告)日：2004-04-28

申请号：EP99972371

申请日：1999-11-12

申请人： MITSUBISHI ELECTRIC CORP ,  SHIMADA RIKA KOUGYO KABUSHIKI

发明人： OYA IZUMI ,  NODA SEIJI ,  MIYAMOTO MAKOTO ,  KUZUMOTO MASAKI ,  OMORI MASASHI ,  KATAOKA TATSUO

IPC分类号： H01L21/302 ,  C23F1/00 ,  G03F7/30 ,  G03F7/42 ,  H01L21/00 ,  H01L21/027 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/67075 ,  G03F7/42 ,  G03F7/422 ,  G03F7/423 ,  G03F7/428

摘要： An environment-friendly photoresist film removing method of a high removal efficiency, leading to reducing the amount of materials used and the cost for ventilation installations and a device used therein are disclosed. The method comprising placing a wafer having thereon a photoresist film in a closed system in such a way as to be in contact with a photoresist film removing solution, allowing ozone to be present near the surface of the solution in gas form and/or in liquid form such that ozone is mixed into a solution, and decomposing and removing the photoresist film by changing the position of the surface of the wafer relative to the surface of the solution, is characterized in that the relative position is continuously or intermittently changed in an arbitrary range from the position where the bottom of the wafer is over the surface of the solution to the position where the top of the wafer is below the surface of the solution.

摘要翻译： 提供了一种在减少材料消耗和通风设备的成本的同时，以高效的除去效率和环境而去除光致抗蚀剂膜的方法，以及用于该方法的装置。 特别地，本发明提供了去除设置在基板表面上的光致抗蚀剂膜的方法，包括以下步骤：在密封系统中，将具有光致抗蚀剂膜的基板表面设置为与光致抗蚀剂膜去除溶液接触，使臭氧存在于气体中 相位和/或溶液相位在光致抗蚀剂膜去除溶液的液面附近，以及改变基板的表面和溶液的液面之间的相对位置，以从底层分解或去除光致抗蚀剂膜，其特征在于 因为相对位置在溶液的液面之上存在基板的底部边缘的位置与基板的上边缘的另一位置之间的范围内连续地或间歇地变化， 解决方案。 本发明还提供了一种用于该方法的装置。

公开(公告)号：EP1049142A4

公开(公告)日：2003-01-02

申请号：EP99972372

申请日：1999-11-12

申请人： MITSUBISHI ELECTRIC CORP

发明人： NODA SEIJI ,  KUZUMOTO MASAKI ,  OYA IZUMI ,  MIYAMOTO MAKOTO

IPC分类号： H01L21/302 ,  G03F7/26 ,  G03F7/42 ,  H01L21/027 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/00 ,  H01L21/311

CPC分类号： G03F7/427 ,  G03F7/42

摘要： A method and a device for removing a photoresist film which can reduce ventilation equipment costs and material costs and prevent environmental pollutions; specifically, a method for removing a photoresist film in an airtight system by supplying to a photoresist film spread on a substrate surface a photoresist film removing agent, containing an ozonized gas and a photoresist film removing solution, from a photoresist film removing agent supply plate disposed facing the photoresist film uniformly and continuously or intermittently; and a photoresist film removing device used for the method.

摘要翻译： 提供了一种在减少材料消耗和通风设备的成本的同时，以高效的除去效率和环境而去除光致抗蚀剂膜的方法，以及用于该方法的装置。 特别地，本发明提供了一种通过密封系统去除光致抗蚀剂膜的方法，均匀且连续或间歇地将含有臭氧化气体和光致抗蚀剂膜去除剂的光致抗蚀剂膜可除去的混合物供应到形成在 通过与光致抗蚀剂膜相对设置的光致抗蚀剂去膜剂供应器来设置基板。 本发明还提供了一种用于该方法的装置。

公开(公告)号：EP1255287A4

公开(公告)日：2008-07-09

申请号：EP01936972

申请日：2001-06-12

申请人： MITSUBISHI ELECTRIC CORP ,  SHIMADA RIKA KOGYO KK

发明人： NODA SEIJI ,  HORIBE HIDEO ,  MIYAMOTO MAKOTO ,  OYA IZUMI ,  KUZUMOTO MASAKI

IPC分类号： B08B7/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/304 ,  B08B3/10

CPC分类号： H01L21/02071 ,  B08B7/00 ,  H01L21/31133 ,  H01L21/67051

摘要： In a substrate processing method for clearing a substrate surface of organic contaminants with a mixed gas containing a wet-ozone containing gas and a basic gas, the corrosion of the metal interconnection is suppressed by controlling the quantity of basic gas introduced. A substrate processing apparatus comprises substrate heating means (4) for holding a substrate at a higher temperature than the room temperature, wetting means (7) for producing the wet ozone-containing gas, feed means (5) for feeding the wet ozone-containing gas to the substrate surface, a gas feed pipe (8) for connecting the wet means and the feed means, feed means (18) for feeding the basic gas containing-gas to the substrate surface, and gas heating means (9) for heating the wet means, the feed means and the gas feed pipe to a temperature equal to or higher than the temperature of the substrate.