公开(公告)号：EP0650111A3

公开(公告)日：1997-07-16

申请号：EP94115952.7

申请日：1994-10-10

申请人： MOTOROLA, INC.

发明人： Tisinger, Eric W. ,  Okada, David M.

IPC分类号： G05F3/24

CPC分类号： G05F3/185 ,  G05F3/24

摘要： A novel off-line bootstrap startup circuit (10) including a high voltage device (100) for providing an initial bias voltage to an integrated circuit (IC) is provided. The high voltage device includes an NMOS transistor (102) having a high source to ground breakdown voltage thereby extending a bias voltage range provided to the IC. This bias voltage range may be needed to support large comparator (303) hysteresis and allow for an unregulated bias voltage. The bootstrap startup circuit becomes inoperative when the bias voltage exceeds a predetermined value.

公开(公告)号：EP0650111A2

公开(公告)日：1995-04-26

申请号：EP94115952.7

申请日：1994-10-10

申请人： MOTOROLA, INC.

发明人： Tisinger, Eric W. ,  Okada, David M.

IPC分类号： G05F3/24

CPC分类号： G05F3/185 ,  G05F3/24

摘要： A novel off-line bootstrap startup circuit (10) including a high voltage device (100) for providing an initial bias voltage to an integrated circuit (IC) is provided. The high voltage device includes an NMOS transistor (102) having a high source to ground breakdown voltage thereby extending a bias voltage range provided to the IC. This bias voltage range may be needed to support large comparator (303) hysteresis and allow for an unregulated bias voltage. The bootstrap startup circuit becomes inoperative when the bias voltage exceeds a predetermined value.

摘要翻译： 提供了一种新颖的离线自举启动电路（10），其包括用于向集成电路（IC）提供初始偏置电压的高压装置（100）。 高电压装置包括具有高的源极对地击穿电压的NMOS晶体管（102），从而延伸提供给IC的偏置电压范围。 可能需要该偏置电压范围来支持大比较器（303）滞后并允许未调节的偏置电压。 当偏置电压超过预定值时，自举启动电路不起作用。